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MMFT5P03HDT1

Onsemi

MMFT5P03HDT1 by Onsemi

MMFT5P03HDT1 by Onsemi is a P-Channel MOSFET with Vdss of 30V and Id of 3.7A, suitable for applications requiring low power dissipation up to 1.56W. With a gate charge of 24nC at Vgs of 10V, it operates in temperatures ranging from -55 °C to 150°C, making it ideal for surface mount applications in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,222 parts In-Stock

1+ parts

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3,222

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Digiode

USA . 1,705 parts In-Stock

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1,705

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Q Components

USA . 1,000 parts In-Stock

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1,000

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ACDS - Activité Composants Distribution Service

France . 872 parts In-Stock

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872

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 780 parts In-Stock

1+ parts

$15.820

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780

$15.820

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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TANS Electronics

Latvia . 7,495 parts In-Stock

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7,495

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Problanco Electronics

Mexico . 4,709 parts In-Stock

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4,709

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SupplyDigital Components

Austria . 4,042 parts In-Stock

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4,042

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Kulean Microsystems

USA . 2,359 parts In-Stock

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2,359

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Perfect Parts

USA . 1,953 parts In-Stock

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1,953

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Corphita

USA . 1,270 parts In-Stock

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1,270

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Cyclops Electronics Ltd (Excess)

UK . 872 parts In-Stock

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872

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Glotronic Ltd.

UK . 698 parts In-Stock

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698

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UHIMA Technologies

Türkiye . 603 parts In-Stock

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603

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Corohmni

South Africa . 228 parts In-Stock

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228

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Overview

Discover the MMFT5P03HDT1 by Onsemi, a high-quality P-Channel MOSFET that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for a wide range of applications in Discrete Semiconductor Products. With a Vdss of 30V and Id of 3.7A, this MOSFET delivers efficient power management and control. Whether you're designing electronics for automotive, industrial, or consumer electronics, the MMFT5P03HDT1 provides exceptional value, benefits, and advantages to meet your needs. Experience the difference with Onsemi's cutting-edge technology and elevate your projects to the next level.

Feature Benefit Bullets

Other Names: MMFT5P03HDT1OS

This unique product code makes it easy to identify and select the correct part for your application.

Standard Package: 1,000

Comes in a standard package size of 1,000 units, making it convenient for bulk orders and stocking.

Category: Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs

Belongs to a reliable category of transistors, ensuring high performance and efficiency.

FET Type: P-Channel

P-Channel FETs are known for their low on-state resistance, making them suitable for high-speed switching applications.

Drain to Source Voltage (Vdss): 30V

Can handle up to 30V of voltage, suitable for a wide range of electronic circuits.

Current - Continuous Drain (Id) @ 25 °C: 3.7A (Ta)

Capable of handling a continuous current of 3.7A, ideal for applications requiring high power.

Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V

Low on-state resistance of 100mOhm ensures minimal power loss and efficient operation.

Operating Temperature: -55 °C ~ 150°C (TJ)

Wide operating temperature range allows for use in extreme environmental conditions.

Mounting Type: Surface Mount

Surface mount package makes it easy to integrate into PCBs, saving space and reducing assembly time.

Supplier Device Package: SOT-223 (TO-261)

Comes in a standard SOT-223 package, widely used and easily compatible with various applications.

Technical Specifications

Additional Parts MMFT5P03HDT1 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Other Names:

MMFT5P03HDT1OS

Operating Temperature:

-55°C ~ 150°C (TJ)

Category:

Discrete Semiconductor Products
Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type:

P-Channel

Input Capacitance (Ciss) (Max) @ Vds:

950 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:

24 nC @ 10 V

Mounting Type:

Surface Mount

Rds On (Max) @ Id, Vgs:

100mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Supplier Device Package:

SOT-223 (TO-261)

Standard Package:

1,000

Drain to Source Voltage (Vdss):

30 V

Power Dissipation (Max):

1.56W (Ta)

Package / Case:

TO-261-4, TO-261AA

Technology:

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C:

3.7A (Ta)

Vgs (Max):

±20V

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Package:

Tape & Reel (TR)

Base Product Number:

MMFT5P

Moisture Sensitivity Level (MSL):

3 (168 Hours)

Trade Compliance

MMFT5P03HDT1 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.29.0095

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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