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MMBZ5261ELT1

Onsemi

MMBZ5261ELT1 by Onsemi

MMBZ5261ELT1 by Onsemi is a Zener diode with 47V nominal voltage, ±5% tolerance, and 225mW max power. Ideal for applications requiring precise voltage regulation in a compact SOT-23-3 package. Operating temperature range of -55 °C to 150°C makes it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,213 parts In-Stock

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Digiode

USA . 2,069 parts In-Stock

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AZTECH Wire

Italy . 449 parts In-Stock

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$8.760

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449

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SupplyDigital Components

Austria . 6,250 parts In-Stock

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Problanco Electronics

Mexico . 4,388 parts In-Stock

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TANS Electronics

Latvia . 2,996 parts In-Stock

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Corphita

USA . 964 parts In-Stock

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Kulean Microsystems

USA . 545 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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UHIMA Technologies

Türkiye . 444 parts In-Stock

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Overview

Discover the reliability and precision of the MMBZ5261ELT1 by Onsemi, a top-tier manufacturer known for delivering superior quality in the realm of discrete semiconductor products. This single Zener diode offers a voltage of 47V with a tolerance of ±5%, making it an essential component for a variety of applications. From power management to signal regulation, this product excels in providing stable performance and efficient operation. Trust in Onsemi's expertise and invest in the MMBZ5261ELT1 for unmatched value and unparalleled benefits in your projects.

Feature Benefit Bullets

Standard Package: 3,000

Buying in bulk can provide cost savings and ensure availability for future needs.

Category: Discrete Semiconductor Products, Diodes, Zener, Single Zener Diodes

This product falls under a reliable category of diodes, known for their stability and precision.

Packaging: Tape & Reel (TR)

The tape and reel packaging allows for easy storage and handling, reducing the risk of damage during transportation and storage.

Voltage - Zener (Nom) (Vz): 47 V

The specified voltage ensures protection of sensitive components by maintaining a stable voltage during operation.

Tolerance: ±5%

The tight tolerance ensures accurate and consistent performance in various applications.

Power - Max: 225 mW

With a high maximum power rating, this product can handle demanding applications without overheating.

Impedance (Max) (Zzt): 105 Ohms

The low impedance helps in reducing signal distortion and ensuring efficient operation.

Current - Reverse Leakage @ Vr: 100 nA @ 36 V

The low reverse leakage current helps in maintaining the stability of the circuit even at lower voltages.

Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA

The low forward voltage drop at the specified current ensures efficient power conversion.

Operating Temperature: -55 °C ~ 150°C

The wide operating temperature range allows this product to be used in a variety of environments and applications.

Mounting Type: Surface Mount

The surface mount design simplifies the assembly process and saves valuable PCB space.

Package / Case: TO-236-3, SC-59, SOT-23-3

The specified package types offer versatility in mounting options and compatibility with existing designs.

Supplier Device Package: SOT-23-3 (TO-236)

This standard package ensures easy sourcing and replacement if needed.

Base Product Number: MMBZ52

The base product number provides specific information about the product series and can aid in identification and compatibility.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

The high MSL rating indicates that this product is not sensitive to moisture, ensuring long-term reliability.

Technical Specifications

Additional Parts MMBZ5261ELT1 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Operating Temperature:

-55°C ~ 150°C

Category:

Discrete Semiconductor Products
Diodes Zener Single Zener Diodes

Tolerance:

±5%

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Standard Package:

3,000

Current - Reverse Leakage @ Vr:

100 nA @ 36 V

Package / Case:

TO-236-3, SC-59, SOT-23-3

Power - Max:

225 mW

Voltage - Forward (Vf) (Max) @ If:

900 mV @ 10 mA

Packaging:

Tape & Reel (TR)

Voltage - Zener (Nom) (Vz):

47 V

Impedance (Max) (Zzt):

105 Ohms

Base Product Number:

MMBZ52

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

MMBZ5261ELT1 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0050

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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