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MMBZ5227ELT1

Onsemi

MMBZ5227ELT1 by Onsemi

MMBZ5227ELT1 by Onsemi is a Zener diode with 3.6V nominal voltage, 225mW power max, and 24 Ohms impedance. It is used in applications requiring precise voltage regulation in a compact SOT-23-3 package for surface mounting type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,749 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 613 parts In-Stock

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$13.830

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Problanco Electronics

Mexico . 8,037 parts In-Stock

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TANS Electronics

Latvia . 5,263 parts In-Stock

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SupplyDigital Components

Austria . 5,208 parts In-Stock

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Kulean Microsystems

USA . 2,923 parts In-Stock

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Corphita

USA . 1,949 parts In-Stock

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UHIMA Technologies

Türkiye . 561 parts In-Stock

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Corohmni

South Africa . 321 parts In-Stock

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Overview

Looking to enhance your circuit design with reliable Zener diodes? Look no further than the MMBZ5227ELT1 by Onsemi. With a reputation for high-quality products, Onsemi delivers top-notch performance and durability in every component. Whether you're working on a consumer electronics project or industrial application, this Zener diode offers precise voltage regulation and low reverse leakage for optimal efficiency. Trust Onsemi to provide the value and reliability you need for your next project.

Feature Benefit Bullets

Voltage - Zener (Nom) (Vz) 3.6 V

Having a specific voltage of 3.6 V makes it suitable for applications requiring a consistent zener voltage.

Power - Max 225 mW

With a maximum power of 225 mW, this diode can handle moderate power applications efficiently.

Impedance (Max) (Zzt) 24 Ohms

A low impedance value of 24 Ohms ensures minimal resistance and efficient performance.

Current - Reverse Leakage @ Vr 15 µA @ 1 V

Low reverse leakage current of 15 µA at 1 V ensures minimal power loss and stable operation.

Voltage - Forward (Vf) (Max) @ If 900 mV @ 10 mA

The forward voltage of 900 mV at 10 mA ensures efficient conduction and minimal power dissipation.

Operating Temperature -65 °C ~ 150°C

Wide operating temperature range of -65 °C to 150°C makes it suitable for a variety of environments and applications.

Mounting Type Surface Mount

Surface mounting type allows for easy and secure installation on PCBs.

Package / Case TO-236-3, SC-59, SOT-23-3

Multiple package options provide flexibility in design and compatibility with different setups.

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Unlimited moisture sensitivity level ensures long-term reliability and stability in varied environments.

Technical Specifications

Additional Parts MMBZ5227ELT1 attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Operating Temperature:

-65°C ~ 150°C

Category:

Discrete Semiconductor Products
Diodes Zener Single Zener Diodes

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-23-3 (TO-236)

Standard Package:

3,000

Current - Reverse Leakage @ Vr:

15 µA @ 1 V

Package / Case:

TO-236-3, SC-59, SOT-23-3

Power - Max:

225 mW

Voltage - Forward (Vf) (Max) @ If:

900 mV @ 10 mA

Packaging:

Tape & Reel (TR)

Voltage - Zener (Nom) (Vz):

3.6 V

Impedance (Max) (Zzt):

24 Ohms

Base Product Number:

MMBZ52

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

MMBZ5227ELT1 Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0050

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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