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MMBD6100LT3G

Onsemi

MMBD6100LT3G by Onsemi

MMBD6100LT3G by Onsemi is a common cathode diode with 2 elements, featuring a max forward voltage of 0.7V and output current of 0.2A. With a small outline package style, it is ideal for rectification applications in electronics due to its fast reverse recovery time of 0.004 us.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Sunrise Surplus Inc.

USA . 8,960 parts In-Stock

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Vyrian

USA . 5,997 parts In-Stock

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Digiode

USA . 2,186 parts In-Stock

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AZTECH Wire

Italy . 915 parts In-Stock

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$9.880

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915

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Problanco Electronics

Mexico . 5,081 parts In-Stock

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SupplyDigital Components

Austria . 4,475 parts In-Stock

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Corphita

USA . 2,045 parts In-Stock

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Kulean Microsystems

USA . 1,254 parts In-Stock

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TANS Electronics

Latvia . 797 parts In-Stock

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UHIMA Technologies

Türkiye . 132 parts In-Stock

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Corohmni

South Africa . 61 parts In-Stock

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Overview

Unlock a world of possibilities with the MMBD6100LT3G by Onsemi. Crafted with precision and expertise, this diode offers quality like no other. Whether you're looking to enhance your electronic projects or improve the efficiency of your devices, this diode is the perfect choice. From common cathode configuration to small outline package style, this product boasts versatility and reliability. Trust in Onsemi's reputation for excellence and elevate your designs with the MMBD6100LT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the diode, making it durable and reliable.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuits with common cathode configuration, offering flexibility in design.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.004 us

Offers fast switching speed, reducing power loss and improving overall efficiency.

Package Shape: RECTANGULAR

Facilitates space-saving integration in compact electronic devices.

No. of Terminals: 3

Provides necessary connections for proper functioning of the diode in a circuit.

Package Style (Meter): SMALL OUTLINE

Suitable for applications where space is limited and compact form factor is essential.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring stable performance under varying conditions.

Terminal Finish: TIN

Enhances solderability and conductivity for reliable connections.

Terminal Position: DUAL

Provides flexibility in mounting and installation options for different circuit configurations.

Maximum Power Dissipation: 0.225 W

Can handle moderate power levels without overheating, suitable for various applications.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering process and reliability during PCB assembly.

Peak Reflow Temperature °C: 260

Withstands high temperature reflow soldering process without damage or degradation.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, providing reliable conversion of AC to DC.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop ensures efficient power conversion and minimal energy loss.

Maximum Output Current: 0.2 A

Can handle moderate output currents, suitable for various low to medium power applications.

Terminal Form: GULL WING

Facilitates proper and secure mounting on PCBs for reliable connection.

No. of Elements: 2

Provides dual rectifier diodes in a single package, offering convenience and space-saving benefits.

Maximum Repetitive Peak Reverse Voltage: 70 V

Can handle moderate reverse voltages, suitable for many applications requiring voltage rectification.

Diode Element Material: SILICON

Silicon-based diode offers stable and reliable performance over a wide range of temperatures and conditions.

Technical Specifications

Diodes & Rectifiers MMBD6100LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.7 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD6100LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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