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MBR350RLG

Onsemi

MBR350RLG by Onsemi

MBR350RLG by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and output current of 3A. It operates b/w -65°C to 150°C, making it suitable for high-efficiency applications. The diode has a max repetitive peak reverse voltage of 50V and non-repetitive peak forward current of 80A, housed in an isolated axial package style.

Median Price

$0.520

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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DigiKey

USA . 4,595 parts In-Stock

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$0.540

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$0.297

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Chip1Stop

Japan . 126 parts In-Stock

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Flip Electronics

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Bristol Electronics

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Atlantic Semiconductor

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Vyrian

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ComSIT Distribution GmbH

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LWI Electronics Inc

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Digiode

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Nova Conductors

Japan . 84 parts In-Stock

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Martec Srl

Italy . 78 parts In-Stock

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Ampacity Inc.

Singapore . 108 parts In-Stock

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Corohmni

South Africa . 430 parts In-Stock

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AZTECH Wire

Italy . 155 parts In-Stock

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Metaverse IC Inc.

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Perfect Parts

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Problanco Electronics

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A-Z Elektronik GmbH

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Continental Prestige Electronics

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UHIMA Technologies

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Aranea Global

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Overview

Unlock the power of efficiency with the Onsemi MBR350RLG diode rectifier. Crafted by a trusted manufacturer known for quality, this product offers reliable performance and long-lasting durability. Perfect for a wide range of applications, this diode is designed to provide optimal functionality in any setting. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 50V, this diode is sure to meet your needs with ease. Upgrade your systems today and experience the value and benefits that the MBR350RLG has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection to the diode, making it suitable for long term use.

Configuration: SINGLE

Simple single configuration makes it easy to use and integrate into various circuits.

Package Shape: ROUND

Round shape allows for easy mounting and installation in different devices.

Application: EFFICIENCY

Designed for efficiency, this diode is perfect for applications where energy conservation is crucial.

Maximum Operating Temperature: 150 °C

High operating temperature allows for use in a wide range of environments.

Terminal Finish: MATTE TIN

Matte tin finish ensures good electrical conductivity and solderability.

Diode Type: RECTIFIER DIODE

Rectifier diode is ideal for converting AC to DC and ensuring steady current flow.

Maximum Forward Voltage (VF): 0.6 V

Low forward voltage drop results in minimal power loss and efficient operation.

Maximum Output Current: 3 A

High output current capability makes it suitable for various power applications.

Technology: SCHOTTKY

Schottky technology offers low forward voltage and fast switching speed for improved performance.

Maximum Repetitive Peak Reverse Voltage: 50 V

Resists reverse voltage up to 50V, providing protection against voltage spikes and surges.

Diode Element Material: SILICON

Silicon material ensures high reliability and efficiency in the diode's performance.

Technical Specifications

Diodes & Rectifiers MBR350RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.6 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR350RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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