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MBR30L45CTG

Onsemi

MBR30L45CTG by Onsemi

The Onsemi MBR30L45CTG is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 45V. It operates b/w -55 °C to 150°C, suitable for high-efficiency applications. With a max output current of 15A and non-repetitive peak forward current of 190A, it offers reliable performance in various electronic circuits.

Median Price

$0.822

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 379,751 parts In-Stock

1+ parts

-

100+ parts

$0.793

1k+ parts

$0.658

10k+ parts

$0.587

379,751

-

$0.793

$0.658

$0.587

DigiKey

USA . 379,751 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.990

10k+ parts

-

379,751

-

-

$0.990

-

Verical

USA . 379,751 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.822

10k+ parts

$0.733

379,751

-

-

$0.822

$0.733

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,560 parts In-Stock

1+ parts

$0.618

100+ parts

-

1k+ parts

-

10k+ parts

-

1,560

$0.618

-

-

-

Component Electronics Inc.

Canada . 7 parts In-Stock

1+ parts

$1.540

100+ parts

$1.150

1k+ parts

$1.000

10k+ parts

-

7

$1.540

$1.150

$1.000

-

Vyrian

USA . 9,945 parts In-Stock

1+ parts

-

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9,945

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.135

100+ parts

$0.123

1k+ parts

$0.111

10k+ parts

-

500

$0.135

$0.123

$0.111

-

Corphita

USA . 2,491 parts In-Stock

1+ parts

$0.585

100+ parts

-

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-

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2,491

$0.585

-

-

-

Corohmni

South Africa . 154 parts In-Stock

1+ parts

$0.650

100+ parts

-

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154

$0.650

-

-

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Microchip USA

USA . 277 parts In-Stock

1+ parts

$4.355

100+ parts

-

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277

$4.355

-

-

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AZTECH Wire

Italy . 200 parts In-Stock

1+ parts

$12.280

100+ parts

-

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200

$12.280

-

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Continental Prestige Electronics

USA . 544,751 parts In-Stock

1+ parts

-

100+ parts

$0.668

1k+ parts

-

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544,751

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$0.668

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 27,237 parts In-Stock

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27,237

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Authorized Procurement Solutions

USA . 8,500 parts In-Stock

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8,500

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A-Z Elektronik GmbH

Germany . 6,956 parts In-Stock

1+ parts

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6,956

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Kulean Microsystems

USA . 5,017 parts In-Stock

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5,017

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Problanco Electronics

Mexico . 4,902 parts In-Stock

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4,902

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SupplyDigital Components

Austria . 3,243 parts In-Stock

1+ parts

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3,243

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TANS Electronics

Latvia . 3,122 parts In-Stock

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3,122

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UHIMA Technologies

Türkiye . 659 parts In-Stock

1+ parts

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659

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Kepictronics

USA . 150 parts In-Stock

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150

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Overview

Experience the reliability and efficiency of the MBR30L45CTG diode by Onsemi. With a reputation for top-quality manufacturing, Onsemi delivers a product that exceeds expectations in various applications. The common cathode configuration and Schottky technology provide superior performance, while the maximum output current of 15A ensures optimal functionality. From industrial machinery to consumer electronics, this rectifier diode offers unmatched value and benefits to customers seeking high-quality components for their projects. Trust Onsemi for excellence in every detail.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient and effective current flow in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds, leading to improved efficiency.

Maximum Output Current: 15 A

Capable of handling high currents, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 45 V

Can handle high reverse voltages, providing protection for the circuit.

Technical Specifications

Diodes & Rectifiers MBR30L45CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

190 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR30L45CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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