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MBR3045WTG

Onsemi

MBR3045WTG by Onsemi

MBR3045WTG by Onsemi is a Schottky rectifier diode with 45V max reverse voltage, 15A max output current, and 0.76V max forward voltage. Commonly used in power applications due to its high efficiency and temperature range of -65°C to 175°C.

Median Price

$2.181

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 2 parts In-Stock

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$2.540

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2

$2.540

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Farnell

UK . 713 parts In-Stock

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$2.713

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713

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$2.713

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Rochester

USA . 413 parts In-Stock

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$1.880

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$1.680

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$1.580

413

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$1.880

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$1.580

DigiKey

USA . 413 parts In-Stock

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$2.150

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413

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$2.150

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Verical

USA . 336 parts In-Stock

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$2.212

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$2.075

336

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$2.075

Arrow

USA . 2 parts In-Stock

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$1.775

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$1.775

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Digiode

USA . 1,903 parts In-Stock

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$2.080

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1,903

$2.080

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Nova Conductors

Japan . 1,050 parts In-Stock

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$2.680

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1,050

$2.680

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DigiKey Marketplace

USA . 1,491 parts In-Stock

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Chip Stock

USA . 395 parts In-Stock

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395

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Zilex Electronics Inc.

Canada . 350 parts In-Stock

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LWI Electronics Inc

India . 10 parts In-Stock

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Vyrian

USA . 2 parts In-Stock

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Benley Electronics

USA . 1 parts In-Stock

1+ parts

$0.750

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1

$0.750

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Ampacity Inc.

Singapore . 163 parts In-Stock

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$1.510

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163

$1.510

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Corohmni

South Africa . 442 parts In-Stock

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$1.775

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$1.775

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Corphita

USA . 881 parts In-Stock

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$1.971

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881

$1.971

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Component Stockers USA

USA . 2,853 parts In-Stock

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$2.250

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$2.110

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$1.910

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2,853

$2.250

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$1.910

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Argo Parts USA

USA . 4,671 parts In-Stock

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$2.680

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4,671

$2.680

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QUARKTWIN TECHNOLOGY LTD

USA . 16,562 parts In-Stock

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Lixinc

USA . 8,738 parts In-Stock

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Microchip USA

USA . 8,274 parts In-Stock

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Kulean Microsystems

USA . 7,812 parts In-Stock

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Problanco Electronics

Mexico . 7,360 parts In-Stock

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Continental Prestige Electronics

USA . 7,288 parts In-Stock

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$2.430

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TANS Electronics

Latvia . 6,863 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,753 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,917 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 2,940 parts In-Stock

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Netroflash

USA . 1,050 parts In-Stock

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$2.626

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$2.546

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$2.492

1,050

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$2.626

$2.546

$2.492

UHIMA Technologies

Türkiye . 750 parts In-Stock

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750

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Assy Fe

Spain . 60 parts In-Stock

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Overview

Enhance your power applications with the MBR3045WTG diode by Onsemi, a top-quality product designed for efficiency and reliability. With its common cathode configuration and Schottky technology, this diode offers superior performance and maximum output current of 15A. Whether you're working on power supplies, converters, or inverters, this diode is the perfect choice to ensure seamless operation. Trust in Onsemi's expertise in diodes and rectifiers to deliver exceptional value and benefits to your projects. Elevate your power solutions with the MBR3045WTG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection for the diodes, making them suitable for long-term use in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient circuit design and improved performance in power applications.

Maximum Reverse Current: 100000 uA

With a maximum reverse current of 100000 uA, these diodes can handle high levels of reverse current without degradation, ensuring reliable operation.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to mount and integrate these diodes into different circuit configurations, adding versatility to their application.

No. of Terminals: 3

The 3 terminals provide easy connectivity and enable precise control over the diode's operation, making them ideal for power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting of the diodes, ensuring they stay in place during operation.

Application: POWER

Designed for power applications, these diodes are capable of handling high voltage and current levels, making them a reliable choice for demanding power circuits.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, these diodes can withstand high temperatures, ensuring stable performance in challenging environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C ensures these diodes can operate effectively in cold conditions, making them suitable for a wide range of environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable connection and prevents oxidation, ensuring optimal performance and longevity of the diodes.

Terminal Position: SINGLE

The single terminal position simplifies the installation and connection process, making it easy to integrate these diodes into different circuit layouts.

Case Connection: CATHODE

The cathode case connection ensures proper polarity and enhances the efficiency of the diodes in power circuits, minimizing the risk of voltage spikes.

Diode Type: RECTIFIER DIODE

As rectifier diodes, these components are designed to efficiently convert AC to DC, making them essential for power supply applications and voltage regulation.

Maximum Forward Voltage (VF): 0.76 V

The low maximum forward voltage of 0.76 V reduces power loss and improves energy efficiency, making these diodes a cost-effective choice for power circuits.

Maximum Output Current: 15 A

With a maximum output current of 15 A, these diodes can handle high current loads, making them suitable for power applications that require efficient current flow.

Technology: SCHOTTKY

The Schottky technology used in these diodes ensures fast switching speeds and low forward voltage drop, enhancing overall performance and efficiency.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies the installation process and provides a secure connection, ensuring stable operation in various circuit layouts.

No. of Elements: 2

With 2 elements in each diode, these components offer improved current handling capacity and efficiency, making them reliable for demanding power applications.

Maximum Repetitive Peak Reverse Voltage: 45 V

The high maximum repetitive peak reverse voltage of 45 V ensures these diodes can withstand voltage spikes and surges, providing reliable protection for sensitive components.

Maximum Non Repetitive Peak Forward Current: 200 A

The high maximum non-repetitive peak forward current of 200 A allows these diodes to handle sudden current surges, making them a robust choice for power circuits.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high reliability, low leakage current, and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers MBR3045WTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW FORWARD VOLTAGE

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.76 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

100000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR3045WTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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