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MBR2090CTLFAJG

Onsemi

MBR2090CTLFAJG by Onsemi

MBR2090CTLFAJG by Onsemi is a Schottky diode array with 90V reverse voltage, 10A average rectified current, and fast recovery speed. Commonly used in applications requiring high-speed rectification such as power supplies and inverters. TO-220 package type suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,683 parts In-Stock

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Digiode

USA . 198 parts In-Stock

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AZTECH Wire

Italy . 545 parts In-Stock

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$18.550

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545

$18.550

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,680 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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SupplyDigital Components

Austria . 6,212 parts In-Stock

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TANS Electronics

Latvia . 5,824 parts In-Stock

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Problanco Electronics

Mexico . 5,463 parts In-Stock

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Kulean Microsystems

USA . 3,796 parts In-Stock

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Corohmni

South Africa . 473 parts In-Stock

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Corphita

USA . 237 parts In-Stock

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UHIMA Technologies

Türkiye . 119 parts In-Stock

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Overview

Discover the cutting-edge MBR2090CTLFAJG by Onsemi, a high-quality diode array that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this product is a game-changer in the world of discrete semiconductor products. Perfect for a wide range of applications, this diode array features fast recovery speed, low forward voltage, and minimal reverse leakage. Say goodbye to inefficiencies and hello to top-notch performance with the MBR2090CTLFAJG. Upgrade your electronics today!

Feature Benefit Bullets

Standard Package: 50

This product comes in a standard package of 50, making it convenient for bulk purchases or for projects requiring multiple components.

Category: Discrete Semiconductor Products, Diodes, Rectifiers, Diode Arrays

This product falls under the category of discrete semiconductor products and diodes, which are essential components in electronics circuits for regulating current flow and voltage.

Package: Tube

The tube packaging ensures that the product is securely stored and easy to handle during transportation and storage.

Diode Configuration: 1 Pair Common Cathode

The common cathode configuration allows for easy integration into circuits and simplifies the design process.

Technology: Schottky

Schottky diodes offer fast switching speeds and low forward voltage drop, making them ideal for high frequency and power efficiency applications.

Voltage - DC Reverse (Vr) (Max): 90 V

The high reverse voltage capability of 90V provides added protection against voltage spikes and overloads.

Current - Average Rectified (Io) (per Diode): 10A

With an average rectified current of 10A per diode, this product can handle high current loads efficiently.

Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A

A low forward voltage drop of 850mV at 10A ensures minimal power loss and improved efficiency in the circuit.

Speed: Fast Recovery =< 500ns, > 200mA (Io)

The fast recovery time of less than 500ns and high current capability of over 200mA ensure quick and reliable switching performance.

Current - Reverse Leakage @ Vr: 100 µA @ 90 V

The low reverse leakage current of 100µA at 90V improves the overall efficiency and reliability of the circuit.

Operating Temperature - Junction: -65 °C ~ 175°C

The wide operating temperature range of -65 °C to 175°C makes this product suitable for use in various environmental conditions.

Mounting Type: Through Hole

The through-hole mounting type offers easy and secure installation on PCBs, ensuring mechanical stability and good electrical connections.

Package / Case: TO-220-3

The TO-220-3 package provides a standardized form factor for easy integration into existing circuits and designs.

Supplier Device Package: TO-220

The TO-220 supplier device package is widely used and recognized in the industry, ensuring compatibility with a variety of applications.

Base Product Number: MBR2090

The MBR2090 is a high-quality base product number, indicating a reliable and well-performing component.

Moisture Sensitivity Level (MSL): 1 (Unlimited)

The moisture sensitivity level of 1 (unlimited) means that this product can be stored and handled without the need for special precautions against moisture damage.

Technical Specifications

Additional Parts MBR2090CTLFAJG attributes and parameters. Explore more Additional Parts devices from Onsemi

Technical Specifications

Speed:

Fast Recovery =< 500ns, > 200mA (Io)

Category:

Discrete Semiconductor Products
Diodes Rectifiers Diode Arrays

Mounting Type:

Through Hole

Supplier Device Package:

TO-220

Standard Package:

50

Current - Reverse Leakage @ Vr:

100 µA @ 90 V

Series:

SWITCHMODE™

Package / Case:

TO-220-3

Technology:

Schottky

Diode Configuration:

1 Pair Common Cathode

Voltage - Forward (Vf) (Max) @ If:

850 mV @ 10 A

Voltage - DC Reverse (Vr) (Max):

90 V

Package:

Tube

Current - Average Rectified (Io) (per Diode):

10A

Operating Temperature - Junction:

-65°C ~ 175°C

Base Product Number:

MBR2090

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Trade Compliance

MBR2090CTLFAJG Miscellaneous Components trade compliance attributes, and parameters.

ECCN

EAR99

HTS

8541.10.0080

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Authentic purchasing experiences

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