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MBR130T3

Onsemi

MBR130T3 by Onsemi

The Onsemi MBR130T3 is a Schottky rectifier diode with max forward voltage of 0.35V and max output current of 1A. It operates at up to 125°C, ideal for applications requiring high efficiency and low power loss in compact designs like consumer electronics and automotive systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 181,670 parts In-Stock

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Vyrian

USA . 12,265 parts In-Stock

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12,265

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Digiode

USA . 1,136 parts In-Stock

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1,136

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 2,835 parts In-Stock

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$0.080

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2,835

$0.080

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Ampacity Inc.

Singapore . 495 parts In-Stock

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$2.010

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495

$2.010

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Semicontronic

India . 1,098 parts In-Stock

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$3.010

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$2.935

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$2.920

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1,098

$3.010

$2.935

$2.920

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AZTECH Wire

Italy . 778 parts In-Stock

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$16.262

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778

$16.262

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Kulean Microsystems

USA . 6,086 parts In-Stock

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Continental Prestige Electronics

USA . 5,766 parts In-Stock

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5,766

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TANS Electronics

Latvia . 3,257 parts In-Stock

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SupplyDigital Components

Austria . 3,034 parts In-Stock

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Problanco Electronics

Mexico . 2,679 parts In-Stock

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Corphita

USA . 2,088 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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500

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Corohmni

South Africa . 328 parts In-Stock

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328

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Argo Parts USA

USA . 303 parts In-Stock

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303

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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246

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Overview

Elevate your electronic projects with the MBR130T3 from Onsemi. Crafted with precision and expertise, this diode rectifier offers unmatched quality and reliability. Ideal for a variety of applications, this small outline package is perfect for surface mount designs. With a maximum output current of 1A and a maximum repetitive peak reverse voltage of 30V, this Schottky diode ensures optimal performance every time. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Experience the difference with the MBR130T3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, making it more reliable for long-term use.

Config: SINGLE

Single configuration makes it easy to use and install in various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and convenient assembly onto PCBs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs.

Maximum Operating Temperature: 125 °C

High maximum operating temperature range ensures stability under varying conditions.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead finish provides good solderability and electrical conductivity.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures efficient soldering process.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures solid solder joints.

Diode Type: RECTIFIER DIODE

Rectifier diode is specifically designed for converting alternating current to direct current, making it suitable for various applications.

Maximum Forward Voltage (VF): 0.35 V

Low forward voltage drop ensures efficient energy conversion.

Maximum Output Current: 1 A

High output current rating allows for handling of substantial amount of current.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speed.

Terminal Form: GULL WING

Gull wing terminal form provides strong mechanical connection to the PCB.

Maximum Repetitive Peak Reverse Voltage: 30 V

High reverse voltage rating ensures protection against reverse voltage polarity.

Maximum Non Repetitive Peak Forward Current: 5.5 A

High non-repetitive peak forward current can handle short bursts of high current.

Diode Element Material: SILICON

Silicon diode element material offers good electrical properties and reliability.

Technical Specifications

Diodes & Rectifiers MBR130T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.35 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

5.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR130T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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