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MBR130T1

Onsemi

MBR130T1 by Onsemi

MBR130T1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.35V and output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in compact electronic devices. The diode's small outline package with gull wing terminals allows for easy surface mount installation.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 4,000 parts In-Stock

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$0.106

4,000

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$0.106

Rochester

USA . 3,996 parts In-Stock

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$0.119

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$0.099

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$0.088

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$0.119

$0.099

$0.088

DigiKey

USA . 3,996 parts In-Stock

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$0.150

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Verical

USA . 3,996 parts In-Stock

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$0.110

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$0.110

Distributors (In-Stock)

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Nova Conductors

Japan . 16 parts In-Stock

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$0.087

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$0.087

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Digiode

USA . 1,092 parts In-Stock

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$0.093

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1,092

$0.093

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Component Electronics Inc.

Canada . 67 parts In-Stock

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$0.380

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$0.290

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$0.250

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67

$0.380

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Chip Stock

USA . 181,070 parts In-Stock

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Bristol Electronics

USA . 11,336 parts In-Stock

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Vyrian

USA . 7,861 parts In-Stock

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A&K Electronics

USA . 7,000 parts In-Stock

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Semi Source

USA . 3,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,866 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2,837 parts In-Stock

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Microfarads

USA . 2,533 parts In-Stock

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Sea View Technologies

USA . 2,470 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,361 parts In-Stock

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Dan-Mar Components

USA . 2,361 parts In-Stock

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Inventory MP

USA . 1,866 parts In-Stock

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Quantum Digital Technology

USA . 795 parts In-Stock

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795

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EMSNET

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450

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Prism Electronics

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,753 parts In-Stock

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$0.080

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$0.080

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Semicontronic

India . 3,728 parts In-Stock

1+ parts

$0.083

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$0.081

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$0.081

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3,728

$0.083

$0.081

$0.081

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Ampacity Inc.

Singapore . 3,537 parts In-Stock

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$0.083

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$0.083

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Corohmni

South Africa . 439 parts In-Stock

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$0.084

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439

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Aranea Global

USA . 50 parts In-Stock

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$0.085

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$0.082

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50

$0.085

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$0.082

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Argo Parts USA

USA . 3,849 parts In-Stock

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Corphita

USA . 2,441 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.155

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AZTECH Wire

Italy . 1,021 parts In-Stock

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$16.510

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RC Electronics

USA . 59,837 parts In-Stock

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Problanco Electronics

Mexico . 7,522 parts In-Stock

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Kepictronics

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Perfect Parts

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TANS Electronics

Latvia . 4,082 parts In-Stock

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Continental Prestige Electronics

USA . 4,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Assy Fe

Spain . 2,800 parts In-Stock

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Kulean Microsystems

USA . 2,027 parts In-Stock

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SupplyDigital Components

Austria . 1,301 parts In-Stock

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UHIMA Technologies

Türkiye . 229 parts In-Stock

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Overview

Discover the power of the MBR130T1 by Onsemi, a top-of-the-line Schottky rectifier diode designed for high performance in a compact package. With Onsemi's proven track record of quality and reliability, this diode offers unparalleled efficiency and precision in a wide range of applications. From power supplies to automotive electronics, the MBR130T1 delivers superior functionality and durability, ensuring peace of mind for all your projects. Upgrade to the MBR130T1 today and experience the difference that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the design and installation process, reducing complexity and potential points of failure.

Surface Mount: YES

The surface mount option allows for easy installation on PCBs, saving space and enabling efficient assembly.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to place and secure the diode within electronic circuits for optimal performance.

No. of Terminals: 2

With only two terminals, this diode is straightforward to connect and integrate into circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style conserves space on the PCB, ideal for compact electronic devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand demanding environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures reliable performance in extreme cold conditions.

Terminal Finish: Tin (Sn)

The tin terminal finish provides excellent conductivity and solderability, enhancing electrical connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and installation, accommodating different configurations.

Maximum Time At Peak Reflow Temperature (s): 30

This diode can withstand peak reflow temperatures for a specified time, ensuring durability during assembly processes.

Peak Reflow Temperature °C: 235

The high peak reflow temperature capability enables compatibility with lead-free soldering processes.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC current, suitable for power supply applications.

Maximum Forward Voltage (VF): 0.35 V

The low forward voltage drop minimizes power loss and enhances efficiency in circuit operations.

Maximum Output Current: 1 A

With a high output current rating, this diode can handle heavy loads and provide stable performance.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, making this diode ideal for high-frequency applications.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and secure mounting on PCBs, ensuring reliable connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

This diode can tolerate high reverse voltages, providing protection against reverse polarity and voltage spikes.

Maximum Non Repetitive Peak Forward Current: 5.5 A

The high peak forward current rating allows the diode to handle sudden surges in current without damage.

Diode Element Material: SILICON

Silicon diode elements offer high reliability and performance, making this product a durable and long-lasting choice.

Technical Specifications

Diodes & Rectifiers MBR130T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.35 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

5.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR130T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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