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MBR130LSFT1

Onsemi

MBR130LSFT1 by Onsemi

MBR130LSFT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.18V and output current of 1A. It operates at a max temperature of 125°C, making it suitable for applications requiring high efficiency and fast switching, such as power supplies and voltage clamping circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 221,388 parts In-Stock

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Vyrian

USA . 12,989 parts In-Stock

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12,989

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LWI Electronics Inc

India . 2,095 parts In-Stock

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2,095

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Digiode

USA . 310 parts In-Stock

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310

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Nova Conductors

Japan . 15 parts In-Stock

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15

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,255 parts In-Stock

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$0.090

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2,255

$0.090

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Ampacity Inc.

Singapore . 1,214 parts In-Stock

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$1.010

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1,214

$1.010

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Semicontronic

India . 487 parts In-Stock

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$3.010

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$2.935

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$2.920

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487

$3.010

$2.935

$2.920

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AZTECH Wire

Italy . 704 parts In-Stock

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$13.829

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704

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Kepictronics

USA . 56,000 parts In-Stock

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Lixinc

USA . 17,841 parts In-Stock

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Problanco Electronics

Mexico . 8,090 parts In-Stock

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TANS Electronics

Latvia . 5,825 parts In-Stock

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SupplyDigital Components

Austria . 3,380 parts In-Stock

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Argo Parts USA

USA . 3,276 parts In-Stock

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Continental Prestige Electronics

USA . 1,342 parts In-Stock

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1,342

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UHIMA Technologies

Türkiye . 542 parts In-Stock

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542

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Corohmni

South Africa . 365 parts In-Stock

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365

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Kulean Microsystems

USA . 342 parts In-Stock

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342

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Corphita

USA . 266 parts In-Stock

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266

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Bastille Electronics

Australia . 120 parts In-Stock

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120

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Advanced Electronics

New Zealand . 29 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the MBR130LSFT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their diodes & rectifiers. This Schottky rectifier diode offers a maximum forward voltage of 0.18V and a maximum output current of 1A, making it perfect for a wide range of applications. With its small outline package style and dual terminal position, this diode provides convenience and efficiency like no other. Trust Onsemi to bring you high-performance components that exceed expectations. Elevate your projects with the MBR130LSFT1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent durability and corrosion resistance, ensuring a long lifespan for the product.

Config: SINGLE

Simplified design with a single configuration, making it easy to use and install.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Package Shape: RECTANGULAR

Efficient use of space and easy integration into circuit layouts.

No. of Terminals: 2

Simplified connectivity with only two terminals, reducing complexity in wiring.

Package Style (Meter): SMALL OUTLINE

Compact size that saves space and allows for high-density circuit designs.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, ensuring stability and reliability.

Terminal Finish: TIN

Provides good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: DUAL

Dual terminal position for flexible installation and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient amount of time during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for soldering without damaging the diode.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC to DC, making it suitable for various applications.

Maximum Forward Voltage (VF): 0.18 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 1 A

Capable of handling high output currents, making it suitable for power applications.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop for improved efficiency.

Terminal Form: FLAT

Flat terminals for easy soldering and secure connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

Able to handle high reverse voltages safely, ensuring reliable performance.

Maximum Non Repetitive Peak Forward Current: 40 A

Capable of handling high peak forward currents for short durations, suitable for surge protection applications.

Diode Element Material: SILICON

Silicon diode element material for good electrical properties and reliability.

Technical Specifications

Diodes & Rectifiers MBR130LSFT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.18 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR130LSFT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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