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MBR120VLSFT3

Onsemi

MBR120VLSFT3 by Onsemi

MBR120VLSFT3 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.205 V and a max output current of 1 A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.

Median Price

$0.163

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 70 parts In-Stock

1+ parts

$0.163

100+ parts

-

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70

$0.163

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Vyrian

USA . 8,754 parts In-Stock

1+ parts

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8,754

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Digiode

USA . 1,955 parts In-Stock

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1,955

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 82 parts In-Stock

1+ parts

$0.076

100+ parts

$0.069

1k+ parts

$0.062

10k+ parts

-

82

$0.076

$0.069

$0.062

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Aztec Data Supply Inc.

USA . 3,621 parts In-Stock

1+ parts

$0.090

100+ parts

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3,621

$0.090

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Corohmni

South Africa . 423 parts In-Stock

1+ parts

$0.160

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423

$0.160

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Continental Prestige Electronics

USA . 4,411 parts In-Stock

1+ parts

$0.163

100+ parts

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$0.160

4,411

$0.163

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-

$0.160

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.163

100+ parts

$0.160

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1,000

$0.163

$0.160

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Argo Parts USA

USA . 686 parts In-Stock

1+ parts

$0.163

100+ parts

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$0.158

686

$0.163

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-

$0.158

Semicontronic

India . 1,598 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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1,598

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 772 parts In-Stock

1+ parts

$1.010

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772

$1.010

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AZTECH Wire

Italy . 382 parts In-Stock

1+ parts

$14.368

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382

$14.368

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Kulean Microsystems

USA . 6,792 parts In-Stock

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6,792

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TANS Electronics

Latvia . 6,330 parts In-Stock

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6,330

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SupplyDigital Components

Austria . 5,978 parts In-Stock

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5,978

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Problanco Electronics

Mexico . 5,751 parts In-Stock

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5,751

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Corphita

USA . 2,132 parts In-Stock

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2,132

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UHIMA Technologies

Türkiye . 862 parts In-Stock

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862

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Overview

Discover the MBR120VLSFT3 by Onsemi - a high-quality diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With its small outline package style and dual terminal position, it is easy to install and use. Not only does it have a maximum operating temperature of 125 °C, but it also has a minimum operating temperature of -65 °C - making it suitable for various environments. Its Schottky technology ensures efficient power conversion, while its matte tin terminal finish adds durability. Whether you need it for rectification or other purposes, the MBR120VLSFT3 is your go-to solution. Experience the value, benefits, and advantages it brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan and reliable performance.

Config: SINGLE

Singe configuration simplifies the use and installation of the diode.

Surface Mount: YES

Surface mount capability makes it easy to integrate this diode into various electronic applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs and space-saving design.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces complexity.

Package Style (Meter): SMALL OUTLINE

Small outline package style helps in compact and lightweight designs.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability even in challenging environments.

Minimum Operating Temperature: -65 °C

Wide range of operating temperatures allows for versatile use in different conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance, ensuring stable performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time helps in efficient soldering process and prevents damage to the diode.

Peak Reflow Temperature °C: 260

High peak reflow temperature facilitates reliable soldering and ensures strong connections.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for various applications requiring rectification of AC voltage to DC voltage.

Maximum Forward Voltage (VF): 0.205 V

Low maximum forward voltage leads to minimal voltage drop across the diode, increasing efficiency.

Maximum Output Current: 1 A

High maximum output current allows for handling moderate power requirements efficiently.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching capabilities, enhancing overall performance.

Terminal Form: FLAT

Flat terminal form aids in easy and secure soldering, ensuring reliable electrical connections.

Maximum Repetitive Peak Reverse Voltage: 20 V

Suitable for applications requiring handling of up to 20V in reverse voltage.

Maximum Non Repetitive Peak Forward Current: 45 A

Capable of handling high non-repetitive peak forward currents for brief periods, making it versatile in various applications.

Diode Element Material: SILICON

Silicon diode element material provides good electrical properties and reliability, ensuring consistent performance.

Technical Specifications

Diodes & Rectifiers MBR120VLSFT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.205 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR120VLSFT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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