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MBR120LSFT3

Onsemi

MBR120LSFT3 by Onsemi

MBR120LSFT3 by Onsemi is a Schottky rectifier diode with max forward voltage of 0.26V and max output current of 1A. It operates b/w -55 °C to 125°C, ideal for applications requiring high efficiency and low power loss in compact electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,043 parts In-Stock

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Digiode

USA . 1,305 parts In-Stock

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1,305

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AZTECH Wire

Italy . 349 parts In-Stock

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$15.600

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349

$15.600

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Kepictronics

USA . 62,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,598 parts In-Stock

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15,598

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TANS Electronics

Latvia . 6,618 parts In-Stock

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Problanco Electronics

Mexico . 3,517 parts In-Stock

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Kulean Microsystems

USA . 3,024 parts In-Stock

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3,024

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SupplyDigital Components

Austria . 1,760 parts In-Stock

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Corphita

USA . 575 parts In-Stock

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UHIMA Technologies

Türkiye . 232 parts In-Stock

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Corohmni

South Africa . 118 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the MBR120LSFT3 diode rectifier. Perfect for a wide range of applications, this product offers exceptional performance and efficiency. Its advanced technology and innovative design ensure optimal functionality, making it a valuable addition to any project. Trust Onsemi to deliver the best in diodes and rectifiers, and elevate your work to the next level with the MBR120LSFT3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and ensures the product is resistant to environmental factors, making it suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, reducing production time and costs.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode is capable of withstanding significant heat, improving reliability in various operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are essential for converting AC to DC, making this product suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.26 V

Having a low forward voltage drop helps minimize power losses and improves efficiency in electronic circuits.

Maximum Output Current: 1 A

With a high output current capability, this diode can handle moderate to high power levels, making it suitable for various electronic devices and circuits.

Technical Specifications

Diodes & Rectifiers MBR120LSFT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.26 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR120LSFT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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