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MBR120ESFT1

Onsemi

MBR120ESFT1 by Onsemi

MBR120ESFT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.36V and output current of 1A. It operates at a max temperature of 150 °C, making it suitable for applications requiring high efficiency and low power loss in compact electronic devices. The diode's small outline package shape and surface mount configuration make it ideal for space-constrained designs where fast switching speeds are essential.

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9

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1k+

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Chip Stock

USA . 25,720 parts In-Stock

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Legend Electronics Inc.

USA . 3,270 parts In-Stock

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BCID Electronics Ltd.

Israel . 2,915 parts In-Stock

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Greenchips

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SIE Connect GmbH - GreenChips

Germany . 2,631 parts In-Stock

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Digiode

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ComSIT USA

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Prism Electronics

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AZTECH Wire

Italy . 544 parts In-Stock

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Component Stockers USA

USA . 332 parts In-Stock

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$99.990

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RC Electronics

USA . 15,000 parts In-Stock

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SupplyDigital Components

Austria . 6,993 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,842 parts In-Stock

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TANS Electronics

Latvia . 1,111 parts In-Stock

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Corphita

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UHIMA Technologies

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Corohmni

South Africa . 80 parts In-Stock

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Overview

Discover the power of the MBR120ESFT1 by Onsemi, a top-quality rectifier diode designed to enhance electronic circuits with efficiency and reliability. Onsemi is renowned for its cutting-edge technology and superior manufacturing standards, making this diode a top choice for various applications. With a small outline package and a maximum output current of 1A, this diode offers customers exceptional value and performance. Upgrade your projects today with the MBR120ESFT1 and experience the benefits of precision engineering at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diode, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various applications.

Maximum Forward Voltage (VF): 0.36 V

Low forward voltage drop ensures energy efficiency and minimal power loss.

Maximum Output Current: 1 A

Capable of handling moderate to high current levels, suitable for many circuits.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching times compared to standard diodes.

Maximum Repetitive Peak Reverse Voltage: 20 V

Can handle moderate reverse voltages, suitable for many applications.

Diode Element Material: SILICON

Silicon diodes offer good performance and reliability for various electronic circuits.

Technical Specifications

Diodes & Rectifiers MBR120ESFT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBR120ESFT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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