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MB1S

Onsemi

MB1S by Onsemi

MB1S by Onsemi is a bridge rectifier diode with a max reverse current of 5 uA and a max operating temperature of 150 °C. It is used in applications that require rectification of AC signals, such as power supplies and motor drives.

Median Price

$0.207

Lifecycle Status

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44

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1k+

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Adafruit Industries

USA . 70 parts In-Stock

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$0.025

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70

$0.025

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Rochester

USA . 3,000 parts In-Stock

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$0.126

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$0.118

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$0.107

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$0.107

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$0.126

$0.118

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$0.107

Distrelec

Netherlands . 2,485 parts In-Stock

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$0.371

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$0.283

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DigiKey

USA . 28,322 parts In-Stock

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$0.640

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Mouser Electronics

USA . 39,852 parts In-Stock

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Newark

USA . 9,075 parts In-Stock

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Farnell

UK . 19,035 parts In-Stock

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Verical

USA . 18,000 parts In-Stock

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Element14

Singapore . 17,354 parts In-Stock

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Master Electronics

USA . 15,000 parts In-Stock

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Arrow

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RS (Exports)

UK . 9,450 parts In-Stock

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Future Electronics

Canada . 9,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

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Chip1Stop

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Digiode

USA . 804 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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TME

Poland . 4,500 parts In-Stock

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Maritex

Poland . 45 parts In-Stock

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IBS Electronics

USA . 363,000 parts In-Stock

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NAC Semi

USA . 162,000 parts In-Stock

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Diverse Electronics

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LIBRA Elektronik GmbH

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ACDS - Activité Composants Distribution Service

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Corel Iberica Componentes, S.L.

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Connector Distribution Corp

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Right Parts Inc.

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Contempo Components LLC

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PC Components Company LLC

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Semi Source

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Semtec, LLC

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ComSIT Distribution GmbH

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ComSIT USA

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Prism Electronics

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Holdelec - ElecDif-Pro

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Semicontronic

India . 26,482 parts In-Stock

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Corphita

USA . 2,592 parts In-Stock

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Corohmni

South Africa . 76 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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Aztec Data Supply Inc.

USA . 335 parts In-Stock

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Modulus Dynamics

Lithuania . 34,162 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Argo Parts USA

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Component Stockers USA

USA . 74,428 parts In-Stock

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$0.490

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$0.230

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$0.140

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Continental Prestige Electronics

USA . 25,570 parts In-Stock

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$0.502

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$0.239

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$0.134

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Perfect Parts

USA . 94,080 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Glotronic Ltd.

UK . 9,600 parts In-Stock

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

UK . 6,016 parts In-Stock

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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Lixinc

USA . 5,216 parts In-Stock

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TANS Electronics

Latvia . 3,813 parts In-Stock

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Kulean Microsystems

USA . 2,576 parts In-Stock

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Supply Digital

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Formix International (Excess)

India . 675 parts In-Stock

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Problanco Electronics

Mexico . 357 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 169 parts In-Stock

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SupplyDigital Components

Austria . 120 parts In-Stock

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UHIMA Technologies

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ChipstoGo Electronic ltd

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Overview

Discover the MB1S by Onsemi, a high-quality bridge rectifier diode that offers unmatched value and benefits. Manufactured by Onsemi, a trusted leader in the industry, this diode excels in applications requiring reliable and efficient power conversion. With its small outline package and surface mount capability, it is perfect for space-constrained designs. The MB1S boasts a maximum reverse current of only 5 uA and a minimum breakdown voltage of 100 V, ensuring optimal performance and durability. Say goodbye to power inefficiencies and hello to a versatile solution with the MB1S by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy body material provides durability and ensures resistance to various environmental conditions, making it a reliable choice.

Config: BRIDGE, 4 ELEMENTS

With a bridge configuration consisting of 4 elements, this diode offers improved efficiency and functionality, making it suitable for a wide range of applications.

Surface Mount: YES

The surface mount capability of this diode allows for easy installation and space-saving, making it an optimal choice for compact electronic designs.

Maximum Reverse Current: 5 uA

This diode's low maximum reverse current ensures minimal power loss and enhanced efficiency, making it an energy-efficient option.

Package Shape: RECTANGULAR

Its rectangular package shape offers easy handling and straightforward installation, contributing to convenience and ease of use.

Reverse Test Voltage: 100 V

With a high reverse test voltage, this diode can handle substantial reverse voltage without experiencing breakdown, ensuring excellent performance and reliability.

No. of Terminals: 4

Equipped with 4 terminals, this diode provides versatile connectivity options, increasing its applicability for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this diode suitable for space-limited environments without sacrificing its operational capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated heat levels without compromising its functionality, making it suitable for demanding applications.

Minimum Operating Temperature: -55 °C

The extremely low minimum operating temperature ensures reliable operation even in extremely cold environments, making this diode suitable for a diverse range of conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and corrosion resistance, ensuring stable and long-lasting performance in various operating conditions.

Terminal Position: DUAL

With a dual terminal position, this diode offers flexible installation options, making it compatible with different PCB layouts and circuit designs.

Maximum Power Dissipation: 1.4 W

The high maximum power dissipation capability of this diode ensures efficient heat dissipation, enabling it to handle high power loads reliably.

Minimum Breakdown Voltage: 100 V

Its high minimum breakdown voltage ensures reliable operation under high voltage conditions, making this diode suitable for demanding power applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this diode allows for efficient soldering and assembly processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for reliable soldering and ensures secure connections during manufacturing.

Reference Standard: UL RECOGNIZED

Being UL recognized, this diode complies with international safety standards, offering peace of mind and assurance of its high quality and reliability.

Diode Type: BRIDGE RECTIFIER DIODE

This product's bridge rectifier diode type makes it well-suited for converting alternating current (AC) to direct current (DC), making it an essential component for many electronic devices.

Maximum Forward Voltage (VF): 1 V

With a low maximum forward voltage, this diode experiences minimal voltage drop, resulting in efficient power transmission and improved overall performance.

Maximum Output Current: 0.5 A

The high maximum output current capability of this diode allows it to handle substantial power loads, making it suitable for various applications, including power supplies and converters.

Terminal Form: GULL WING

The gull wing terminal form provides secure connectivity and easy soldering, ensuring reliable connections for smooth operation in any circuit configuration.

No. of Elements: 4

Equipped with four elements, this diode offers improved reliability and enhanced functionality, making it an ideal choice for demanding applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a high maximum repetitive peak reverse voltage, this diode can withstand substantial reverse voltage repeatedly without degradation, ensuring consistent performance over time.

Moisture Sensitivity Level (MSL): 1

The moisture sensitivity level of 1 indicates that this diode has a low moisture absorption rate, making it suitable for various environments without compromising reliability.

No. of Phases: 1

This diode operates in a single phase, making it compatible with single-phase power systems and simplifying its integration into a wide range of applications.

Maximum Non Repetitive Peak Forward Current: 35 A

With a high maximum non-repetitive peak forward current, this diode can handle short-duration power surges efficiently, making it suitable for applications with occasional high current demands.

Diode Element Material: SILICON

The silicon diode element material used in this product offers excellent performance and reliability, making it a popular and trusted choice in electronic circuits.

Technical Specifications

Bridge Rectifier Diodes MB1S attributes and parameters. Explore more Bridge Rectifier Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

100 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1.4 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

100 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MB1S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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