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LM324ADTBR2

Onsemi

LM324ADTBR2 by Onsemi

LM324ADTBR2 by Onsemi is a 4-function Op Amp with 3000uV Max Input Offset Voltage, 70dB CMRR, and 15000 Min Voltage Gain. Ideal for commercial applications, it operates at -16V to +16V supply voltage range with a low bias current of 0.1uA @25C.

Median Price

$0.620

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mobius Materials

USA . 980 parts In-Stock

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$0.620

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$0.490

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980

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$0.490

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Chip Stock

USA . 77,000 parts In-Stock

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Vyrian

USA . 7,007 parts In-Stock

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Digiode

USA . 1,335 parts In-Stock

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Nova Conductors

Japan . 22 parts In-Stock

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22

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 427 parts In-Stock

1+ parts

$0.620

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427

$0.620

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Ampacity Inc.

Singapore . 638 parts In-Stock

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$6.410

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638

$6.410

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AZTECH Wire

Italy . 489 parts In-Stock

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$19.046

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489

$19.046

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Component Stockers USA

USA . 720 parts In-Stock

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$99.990

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720

$99.990

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TANS Electronics

Latvia . 6,893 parts In-Stock

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Kulean Microsystems

USA . 5,477 parts In-Stock

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SupplyDigital Components

Austria . 4,775 parts In-Stock

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UHIMA Technologies

Türkiye . 592 parts In-Stock

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RC Electronics

USA . 500 parts In-Stock

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$0.370

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$0.350

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$0.340

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$0.340

Microchip USA

USA . 463 parts In-Stock

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Problanco Electronics

Mexico . 428 parts In-Stock

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Kepictronics

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Corphita

USA . 65 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Unleash the power of precision with the LM324ADTBR2 by Onsemi, the ultimate choice for operational amplifiers. Crafted with the highest quality materials and cutting-edge technology, this product offers unparalleled performance and reliability. From audio equipment to industrial automation, the possibilities are endless with this versatile component. Elevate your projects with the LM324ADTBR2 and experience the value of top-notch engineering at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material ensures long-term reliability and affordability.

Maximum Input Offset Voltage: 3000 uV

Low offset voltage allows for accurate signal processing and minimizes error in the output.

Surface Mount: YES

Easy and convenient installation on PCBs, saving time and effort during assembly.

Nominal Common Mode Reject Ratio: 70 dB

High rejection ratio ensures better performance in rejecting common-mode signals, leading to cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard supply voltage, making it compatible with a wide range of applications.

Frequency Compensation: YES

Improves stability and performance by compensating for frequency-dependent properties, allowing for consistent operation across varying frequencies.

Minimum Voltage Gain: 15000

High voltage gain amplifies weak input signals effectively, making it suitable for applications requiring signal amplification.

Maximum Operating Temperature: 70 °C

Operates reliably in a wide temperature range, suitable for various environmental conditions.

Technology: BIPOLAR

Bipolar technology offers high performance with low noise and distortion, making it ideal for precision applications.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it offers versatile functionality for amplification, analog signal processing, and voltage control.

Technical Specifications

Operational Amplifiers (Op Amps) LM324ADTBR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

5/30 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

15000

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

-200 nA

Maximum Bias Current (IIB) @25 °C:

100 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

16 V

Minimum Negative Supply Voltage:

-16 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

LM324ADTBR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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