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LM2903VDG

Onsemi

LM2903VDG by Onsemi

LM2903VDG by Onsemi is a dual comparator with 15000uV max input offset voltage and 0.5uA max average bias current. It operates at -40 to 125 °C, ideal for automotive applications requiring fast response time of 1500ns. The small outline package with gull wing terminals makes it suitable for surface mount designs in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

USA . 7,648 parts In-Stock

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Digiode

USA . 2,442 parts In-Stock

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Sea View Technologies

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Bristol Electronics

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Connector Distribution Corp

USA . 33 parts In-Stock

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Right Parts Inc.

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Prism Electronics

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$0.768

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$0.699

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$0.630

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$0.768

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$0.630

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AZTECH Wire

Italy . 266 parts In-Stock

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$19.570

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Perfect Parts

USA . 47,896 parts In-Stock

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Kepictronics

USA . 19,852 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 7,561 parts In-Stock

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TANS Electronics

Latvia . 7,221 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 5,868 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2,612 parts In-Stock

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Corohmni

South Africa . 201 parts In-Stock

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UHIMA Technologies

Türkiye . 180 parts In-Stock

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Microchip USA

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Corphita

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GreenTree Electronics

Israel . 112 parts In-Stock

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ChipstoGo Electronic ltd

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Overview

Discover the unparalleled precision and reliability of the LM2903VDG comparator by Onsemi. With a reputation for superior quality and advanced technology, Onsemi brings you a cutting-edge solution for a wide range of applications. From automotive to industrial use, this small outline package offers fast response times, low power consumption, and high input offset voltage for optimal performance. Experience the value and benefits of choosing Onsemi for all your comparator needs. Upgrade to the LM2903VDG and elevate your projects to new heights of efficiency and accuracy.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the comparator, making it suitable for a wide range of applications.

Maximum Input Offset Voltage: 15000 uV

The low input offset voltage ensures accurate and stable comparator operation, resulting in precise voltage comparison.

Maximum Average Bias Current (IIB): 0.5 uA

The low bias current helps in minimizing power consumption and improving overall efficiency of the comparator circuit.

Surface Mount: YES

Surface mount capability makes installation easy and saves space on the PCB, ideal for compact designs.

No. of Functions: 2

Having multiple functions allows for versatility in comparator applications, providing more options for voltage comparison.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V makes it compatible with standard power sources and ensures consistent performance.

Maximum Supply Voltage Limit: 36 V

The high supply voltage limit allows for operation in diverse voltage environments, increasing the product's flexibility.

Output Type: OPEN-COLLECTOR

The open-collector output type facilitates easy interfacing with other digital circuits, enhancing the overall functionality of the comparator.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this comparator can be used in harsh environments without compromising on performance.

Technology: BIPOLAR

The bipolar technology employed in this comparator ensures reliable operation and accurate voltage comparison in a variety of applications.

Technical Specifications

Comparators LM2903VDG attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Open-Collector

Performance Specifications

Maximum Input Offset Voltage:

15 mV

Peak Bias Current:

500 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Maximum Supply Current:

2.5 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

36 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

40

Peak Reflow Temperature:

260 °C (500 °F)

Nominal Response Time:

1.5 µs

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Type:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

LM2903VDG Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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