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LM258DMR2

Onsemi

LM258DMR2 by Onsemi

LM258DMR2 by Onsemi is a dual operational amplifier with 85 dB CMRR and 25000 min voltage gain. It operates at -25 to 85 °C, with max supply voltage of +-30V. Ideal for applications requiring high precision amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 38,568 parts In-Stock

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Vyrian

USA . 4,864 parts In-Stock

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Digiode

USA . 1,090 parts In-Stock

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AZTECH Wire

Italy . 1,131 parts In-Stock

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$14.870

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RC Electronics

USA . 31,500 parts In-Stock

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Problanco Electronics

Mexico . 5,848 parts In-Stock

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Microchip USA

USA . 5,564 parts In-Stock

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Kulean Microsystems

USA . 4,667 parts In-Stock

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TANS Electronics

Latvia . 2,508 parts In-Stock

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Corphita

USA . 1,579 parts In-Stock

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SupplyDigital Components

Austria . 1,442 parts In-Stock

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UHIMA Technologies

Türkiye . 979 parts In-Stock

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Corohmni

South Africa . 126 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the LM258DMR2 by Onsemi. As a leading manufacturer of operational amplifiers, Onsemi delivers top-notch quality and precision in every product. The LM258DMR2 is perfect for a wide range of applications, offering exceptional value and benefits to customers. With its compact design and advanced technology, this operational amplifier provides superior functionality and efficiency, making it the ideal choice for your electronic projects. Trust Onsemi's expertise and choose the LM258DMR2 for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good durability and protection for the operational amplifier, ensuring a longer lifespan.

Maximum Input Offset Voltage: 5000 uV

The low input offset voltage helps in minimizing errors in signal processing, making this operational amplifier suitable for high precision applications.

Surface Mount: YES

Being surface mountable makes it easy to integrate this operational amplifier into compact electronic designs, saving space and simplifying assembly processes.

Nominal Common Mode Reject Ratio: 85 dB

The high common mode reject ratio of 85 dB indicates good rejection of unwanted noise and interference from the input signal, ensuring accurate output results.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this operational amplifier compatible with a wide range of electronic systems and power sources.

Power Supplies (V): +-1.5/+-15/3/30

Support for multiple power supply voltages allows flexibility in powering the operational amplifier, making it suitable for various design requirements.

Frequency Compensation: YES

Having frequency compensation ensures stability and prevents oscillations in the operational amplifier, maintaining reliable performance over different operating conditions.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, this product offers high gain, high input impedance, and low output impedance, making it ideal for amplification and signal processing applications.

Technology: BIPOLAR

Utilizing bipolar technology provides good linearity and low noise characteristics, essential for accurate signal processing in various electronic circuits.

Technical Specifications

Operational Amplifiers (Op Amps) LM258DMR2 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±15/3/30 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Offset:

No

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

25000

Peak Bias Current:

-300 nA

Maximum Bias Current (IIB) @25 °C:

150 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

32 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

235 °C (455 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

3 mA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Tin/Lead

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

LM258DMR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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