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LM239DTBR2

Onsemi

LM239DTBR2 by Onsemi

LM239DTBR2 by Onsemi is a comparator with 4 functions, operating at -25 to 85 °C. It has a max input offset voltage of 9000 uV and a bias current of 0.4 uA. Ideal for applications requiring open-collector output type and fast response time of 1300 ns.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,701 parts In-Stock

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Digiode

USA . 2,248 parts In-Stock

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Nova Conductors

Japan . 71 parts In-Stock

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Aztec Data Supply Inc.

USA . 206 parts In-Stock

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$4.911

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AZTECH Wire

Italy . 412 parts In-Stock

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$7.268

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412

$7.268

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Ampacity Inc.

Singapore . 554 parts In-Stock

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$7.410

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Semicontronic

India . 749 parts In-Stock

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$8.410

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$8.200

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$8.158

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Continental Prestige Electronics

USA . 6,753 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,730 parts In-Stock

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Problanco Electronics

Mexico . 4,222 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,153 parts In-Stock

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TANS Electronics

Latvia . 2,788 parts In-Stock

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Corphita

USA . 2,433 parts In-Stock

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Argo Parts USA

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SupplyDigital Components

Austria . 1,335 parts In-Stock

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Microchip USA

USA . 451 parts In-Stock

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Corohmni

South Africa . 413 parts In-Stock

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Kulean Microsystems

USA . 387 parts In-Stock

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UHIMA Technologies

Türkiye . 325 parts In-Stock

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Bastille Electronics

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Kepictronics

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Overview

Looking for a high-quality comparator that delivers top-notch performance? Look no further than the LM239DTBR2 by Onsemi. With a reputation for excellence in manufacturing, Onsemi's LM239DTBR2 offers unmatched precision and reliability. Ideal for a variety of applications, this comparator provides customers with value and benefits that are second to none. Don't settle for less when you can have the best with the LM239DTBR2 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product lightweight and durable, ideal for applications where weight is a concern and durability is required.

Maximum Input Offset Voltage: 9000 uV

The high maximum input offset voltage ensures accurate and precise voltage comparison, making this comparator suitable for applications requiring high precision.

Maximum Average Bias Current (IIB): 0.4 uA

The low maximum average bias current helps in reducing power consumption and improving overall efficiency of the system where this comparator is used.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

No. of Functions: 4

Having four functions in one device provides flexibility and versatility in applications, potentially reducing the need for multiple separate components.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V is a common and widely available voltage level, making integration into existing systems easier.

Maximum Supply Voltage Limit: 36 V

With a high maximum supply voltage limit, this comparator can be used in a wide range of voltage levels, increasing its compatibility with different systems.

Output Type: OPEN-COLLECTOR

The open-collector output type allows for easy interfacing with other digital logic components, enhancing the overall compatibility of this comparator.

Technology: BIPOLAR

The bipolar technology used in this comparator provides reliable performance and stability, making it suitable for critical applications where accuracy is key.

Amplifier Type: COMPARATOR

Being a comparator amplifier type, this product is specifically designed for comparing input voltage levels accurately, making it a specialized and efficient choice for voltage measurement applications.

Technical Specifications

Comparators LM239DTBR2 attributes and parameters. Explore more Comparators devices from Onsemi

Amplifier Characteristics

Amplifier Type:

Technology:

BIPOLAR

Power Supply:

5 V

Total Functions:

4

Sub-Category:

Comparators

Output Type:

Open-Collector

Performance Specifications

Maximum Input Offset Voltage:

9 mV

Peak Bias Current:

400 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Maximum Supply Current:

2 mA

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

36 V

Nominal Negative Supply Voltage (Vsup):

0 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-25 °C (-13 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Nominal Response Time:

1.3 µs

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Type:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

LM239DTBR2 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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