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LC03-6R2

Onsemi

LC03-6R2 by Onsemi

LC03-6R2 by Onsemi is a single transient suppression device with 2000W peak power dissipation. It features a 6.8V breakdown voltage and 20V clamping voltage, suitable for protecting electronic circuits from voltage spikes. This avalanche diode in gull wing package is ideal for surface mount applications requiring high surge protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 16,522 parts In-Stock

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Vyrian

USA . 11,228 parts In-Stock

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Digiode

USA . 2,411 parts In-Stock

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LWI Electronics Inc

India . 621 parts In-Stock

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Goldney Electronics S.L.

Spain . 116 parts In-Stock

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AZTECH Wire

Italy . 800 parts In-Stock

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$17.360

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800

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RC Electronics

USA . 13,500 parts In-Stock

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TANS Electronics

Latvia . 6,636 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

USA . 4,050 parts In-Stock

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SupplyDigital Components

Austria . 3,880 parts In-Stock

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Problanco Electronics

Mexico . 2,453 parts In-Stock

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Corphita

USA . 1,323 parts In-Stock

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Kulean Microsystems

USA . 937 parts In-Stock

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UHIMA Technologies

Türkiye . 916 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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Overview

Discover the LC03-6R2 by Onsemi, a top-notch transient suppression device that guarantees high-quality performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product offers unmatched protection against voltage spikes, making it ideal for a wide range of applications. With its single configuration and small outline package style, the LC03-6R2 is easy to install and ensures maximum safety for your electronic devices. Say goodbye to worries about power surges with this innovative diode, providing peace of mind and value for customers seeking top-tier protection for their equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 2000 W

Can handle high power surges without getting damaged, ensuring reliable transient suppression.

Minimum Breakdown Voltage: 6.8 V

Offers effective voltage protection for sensitive components by triggering at a low voltage threshold.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression applications, ensuring optimal performance.

Technology: AVALANCHE

Utilizes avalanche breakdown mechanism for quick response and efficient suppression of transient voltages.

Maximum Clamping Voltage: 20 V

Limits the peak voltage across the protected circuit to a safe level, preventing damage to connected devices.

Technical Specifications

Transient Suppression Devices LC03-6R2 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW CAPACITANCE

Minimum Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

20 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

2000 W

No. of Elements:

1

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LC03-6R2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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