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ICTE-015G

Onsemi

ICTE-015G by Onsemi

ICTE-015G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 15V max reverse voltage and 25V clamping voltage. Ideal for transient suppression applications, it has a breakdown voltage of 17.6V and TIN terminal finish, suitable for peak reflow at 260 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 33,000 parts In-Stock

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Vyrian

USA . 6,575 parts In-Stock

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Digiode

USA . 210 parts In-Stock

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AZTECH Wire

Italy . 1,103 parts In-Stock

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$10.970

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SupplyDigital Components

Austria . 7,261 parts In-Stock

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Kulean Microsystems

USA . 6,628 parts In-Stock

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TANS Electronics

Latvia . 3,577 parts In-Stock

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Problanco Electronics

Mexico . 2,662 parts In-Stock

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Corphita

USA . 946 parts In-Stock

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UHIMA Technologies

Türkiye . 473 parts In-Stock

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Corohmni

South Africa . 65 parts In-Stock

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Overview

Elevate your electronic designs with the ICTE-015G by Onsemi, a top-of-the-line Transient Suppression Device that guarantees unparalleled quality and reliability. Manufactured by Onsemi, a renowned leader in the industry, this diode-type voltage suppressor offers maximum protection against power surges and transient voltage spikes, ensuring optimal performance of your circuits and devices. Whether you're working on industrial equipment, automotive systems, or consumer electronics, the ICTE-015G provides a seamless solution for safeguarding your valuable investments. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and elevates your projects to new heights.

Feature Benefit Bullets

Nominal Breakdown Voltage: 17.6 V

The high nominal breakdown voltage of 17.6 V ensures reliable protection from voltage surges and spikes, making this product a suitable choice for electronic devices with sensitive components.

Terminal Finish: TIN

The TIN terminal finish provides excellent solderability and durability, ensuring a strong connection and longevity of the product in various applications.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature of 260 °C, this device can withstand the soldering process without any damage, guaranteeing a secure and reliable assembly.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a Transient Voltage Suppressor diode, this product is specifically designed to protect against voltage transients and spikes, making it an ideal choice for surge protection applications.

Maximum Repetitive Peak Reverse Voltage: 15 V

The maximum repetitive peak reverse voltage of 15 V ensures consistent protection against reverse voltage spikes, making this device reliable for long-term use in various electronic circuits.

Polarity: UNIDIRECTIONAL

With unidirectional polarity, this device provides protection in one direction only, preventing reverse current flow and ensuring efficient suppression of voltage spikes in electronic systems.

Maximum Clamping Voltage: 25 V

The maximum clamping voltage of 25 V limits the voltage spike magnitude to a safe level, protecting sensitive components from damage and making this product a reliable choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices ICTE-015G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

25 V

JESD-609 Code:

e3

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Terminal Finish:

TIN

Trade Compliance

ICTE-015G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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