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FC807

Onsemi

FC807 by Onsemi

FC807 by Onsemi is a surface mount diode with a max reverse recovery time of 0.008 us, max reverse current of 0.1 uA, and max repetitive peak reverse voltage of 80 V. It is used in applications requiring low forward voltage drop and high reverse test voltage capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,407 parts In-Stock

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Vyrian

USA . 296 parts In-Stock

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Kulean Microsystems

USA . 8,247 parts In-Stock

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SupplyDigital Components

Austria . 4,331 parts In-Stock

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Problanco Electronics

Mexico . 3,382 parts In-Stock

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Corphita

USA . 2,212 parts In-Stock

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TANS Electronics

Latvia . 1,763 parts In-Stock

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Northwest PG Solutions

USA . 1,136 parts In-Stock

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UHIMA Technologies

Türkiye . 499 parts In-Stock

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Native Components

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Corohmni

South Africa . 176 parts In-Stock

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Overview

Unleash the power of innovation with the FC807 by Onsemi, a top-quality Other Function Diode designed to exceed expectations in various applications. Onsemi's reputation for excellence ensures unmatched reliability and performance. From surface mount capabilities to a maximum reverse recovery time of 0.008 us, this diode offers unparalleled value and benefits to customers. Experience the advantage of a maximum forward voltage of 1 V and a maximum repetitive peak reverse voltage of 80 V, providing efficiency and durability like never before. Elevate your projects with the FC807 and embrace a new level of quality and precision.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are more compact and efficient, making them suitable for small and crowded circuit board designs.

Maximum Reverse Recovery Time: 0.008 us

The low reverse recovery time ensures fast switching and improved efficiency in high-frequency applications.

Maximum Reverse Current: 0.1 uA

The low reverse current minimizes power loss and improves overall circuit performance.

Reverse Test Voltage: 50 V

The high reverse test voltage allows for reliable operation in circuits with varying voltage levels.

Maximum Forward Voltage (VF): 1 V

The low forward voltage drop results in lower power dissipation and helps in maximizing energy efficiency.

Maximum Repetitive Peak Reverse Voltage: 80 V

The high peak reverse voltage rating provides protection against voltage spikes and ensures the durability of the diode.

Technical Specifications

Other Function Diodes FC807 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

1 V

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.008 us

Reverse Test Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

FC807 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4930-99-202-2512, 4930992022512

NIIN

992022512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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