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DD20R

Onsemi

DD20R by Onsemi

The Onsemi DD20R is a RECTIFIER DIODE with 1us Reverse Recovery Time, 1500V Repetitive Peak Reverse Voltage, and 2A Output Current. It operates up to 150 °C and has a Max Forward Voltage of 2V. Ideal for high-power applications requiring fast switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,380 parts In-Stock

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2,380

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Vyrian

USA . 2,175 parts In-Stock

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2,175

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 348 parts In-Stock

1+ parts

$0.735

100+ parts

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348

$0.735

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Northwest PG Solutions

USA . 2,154 parts In-Stock

1+ parts

$0.809

100+ parts

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2,154

$0.809

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SupplyDigital Components

Austria . 7,989 parts In-Stock

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7,989

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TANS Electronics

Latvia . 7,873 parts In-Stock

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7,873

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Problanco Electronics

Mexico . 6,692 parts In-Stock

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6,692

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Corphita

USA . 935 parts In-Stock

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935

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Kulean Microsystems

USA . 826 parts In-Stock

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826

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Corohmni

South Africa . 291 parts In-Stock

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291

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UHIMA Technologies

Türkiye . 50 parts In-Stock

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50

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Overview

The DD20R by Onsemi is a top-quality rectifier diode that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this diode stands out for its fast reverse recovery time and high operating temperature. Ideal for a wide range of applications, including power supplies, inverters, and motor drives, the DD20R delivers unmatched value and benefits to customers. Trust Onsemi's expertise and choose the DD20R for your next project for superior quality and performance.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 1 us

This quick reverse recovery time ensures efficient operation of the diode and reduces power loss.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand a wide range of environmental conditions.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is specifically designed for converting AC to DC, making it suitable for various applications.

Maximum Forward Voltage (VF): 2 V

The low forward voltage drop of 2 V ensures minimal power dissipation and efficient energy conversion.

Maximum Output Current: 2 A

With a high maximum output current of 2 A, this diode can handle heavy loads with ease.

Maximum Repetitive Peak Reverse Voltage: 1500 V

The high repetitive peak reverse voltage rating of 1500 V makes this diode suitable for high voltage applications, ensuring reliability and durability.

Technical Specifications

Diodes & Rectifiers DD20R attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

2 V

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Maximum Repetitive Peak Reverse Voltage:

1500 V

Maximum Reverse Recovery Time:

1 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Trade Compliance

DD20R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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