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DCC010

Onsemi

DCC010 by Onsemi

The Onsemi DCC010 is a series connected diode with center tap, featuring 0.004 us reverse recovery time. Ideal for rectification applications, it has a max forward voltage of 1.2V and can handle up to 0.1A output current. With a package style of small outline and gull wing terminals, it operates at temperatures up to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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< 1k

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Digiode

USA . 507 parts In-Stock

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Vyrian

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Native Components

USA . 826 parts In-Stock

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Kepictronics

USA . 39,000 parts In-Stock

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TANS Electronics

Latvia . 6,320 parts In-Stock

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Kulean Microsystems

USA . 5,251 parts In-Stock

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Problanco Electronics

Mexico . 3,239 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Corphita

USA . 1,157 parts In-Stock

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Northwest PG Solutions

USA . 866 parts In-Stock

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UHIMA Technologies

Türkiye . 824 parts In-Stock

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SupplyDigital Components

Austria . 498 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the DCC010 by Onsemi, a leading manufacturer in the field of diodes and rectifiers. This innovative product offers a multitude of applications, providing customers with exceptional value and benefits. With its advanced features and top-notch performance, the DCC010 is designed to meet the needs of various industries. Experience the advantages of this cutting-edge product and elevate your projects to new heights with Onsemi's superior technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode elements inside, ensuring reliable performance.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.004 us

Fast reverse recovery time helps in efficient rectification and switching applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, making it suitable for various industrial applications.

Maximum Power Dissipation: 0.2 W

Efficient power dissipation capability ensures the diode operates within safe limits under normal operating conditions.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification purposes, ensuring optimal performance in converting alternating current to direct current.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop results in minimal power loss and efficient energy conversion.

Maximum Output Current: 0.1 A

Capable of handling moderate output currents for various circuit requirements.

Maximum Repetitive Peak Reverse Voltage: 85 V

Ideal for applications requiring rectification of low to medium voltage signals.

Maximum Non Repetitive Peak Forward Current: 0.3 A

Can handle short-duration peak currents without being damaged, providing transient overcurrent protection.

Technical Specifications

Diodes & Rectifiers DCC010 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Forward Current:

.3 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

DCC010 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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