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DCA010

Onsemi

DCA010 by Onsemi

The Onsemi DCA010 is a fast recovery rectifier diode with common anode configuration. It has a max reverse recovery time of 0.004 us and max reverse current of 0.5 uA. Ideal for applications requiring high-speed switching, it operates at temperatures up to 125 °C and can handle a max output current of 0.1 A.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

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Vyrian

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Kepictronics

USA . 39,000 parts In-Stock

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SupplyDigital Components

Austria . 7,952 parts In-Stock

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Kulean Microsystems

USA . 5,962 parts In-Stock

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Problanco Electronics

Mexico . 4,311 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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TANS Electronics

Latvia . 3,447 parts In-Stock

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Northwest PG Solutions

USA . 2,165 parts In-Stock

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Corphita

USA . 1,392 parts In-Stock

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Native Components

USA . 612 parts In-Stock

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Corohmni

South Africa . 400 parts In-Stock

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UHIMA Technologies

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Overview

Experience the superior quality and reliability of the DCA010 by Onsemi, a leading manufacturer in the industry. This diode rectifier offers fast recovery and a maximum reverse test voltage of 80V, making it ideal for a wide range of applications. With a compact package style and low power dissipation, this product provides exceptional value and performance for your electronic projects. Trust Onsemi for innovative solutions that deliver unmatched benefits and advantages to customers seeking top-notch diodes and rectifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan for the product.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time allows for efficient operation and switching of the diodes, making this product suitable for high-speed applications.

Maximum Reverse Current: 0.5 uA

Low reverse current ensures minimal power loss and enhanced efficiency in the circuit.

Reverse Test Voltage: 80 V

With a high reverse test voltage, this product can handle higher voltages without breakdown, increasing its versatility in various applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance or reliability.

Maximum Forward Voltage (VF): 1.2 V

Low forward voltage drop helps minimize power loss and improve overall efficiency in the circuit.

Maximum Output Current: 0.1 A

Can handle a moderate output current, suitable for a range of low to medium power applications.

Technical Specifications

Diodes & Rectifiers DCA010 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-G3

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

80 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

DCA010 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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