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CAT28LV256GI-25T

Onsemi

CAT28LV256GI-25T by Onsemi

CAT28LV256GI-25T by Onsemi is a 32KX8 EEPROM with 3.3V supply, 250ns access time, and 100000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 943 parts In-Stock

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Native Components

USA . 290 parts In-Stock

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$0.077

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$0.074

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Northwest PG Solutions

USA . 1,358 parts In-Stock

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Component Stockers USA

USA . 453 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,628 parts In-Stock

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SupplyDigital Components

Austria . 2,670 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,354 parts In-Stock

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UHIMA Technologies

Türkiye . 801 parts In-Stock

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TANS Electronics

Latvia . 747 parts In-Stock

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Kulean Microsystems

USA . 333 parts In-Stock

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Corohmni

South Africa . 209 parts In-Stock

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Microchip USA

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Overview

Unlock the power of reliable data storage with the CAT28LV256GI-25T EEPROM by Onsemi. With a robust design and high-quality materials, Onsemi ensures top-notch performance in industrial applications. Enjoy seamless operation and efficient data management with this parallel EEPROM, offering 32K words of memory and 100,000 write/erase cycles. Trust in Onsemi's expertise and elevate your projects with the CAT28LV256GI-25T.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM chip, making it suitable for a variety of applications.

Operating Mode: ASYNCHRONOUS

Allows for independent read and write operations, enhancing flexibility and efficiency in data transfer.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage ensures reliable performance and consistent operation of the EEPROM.

Memory Density: 262144 bit

Offers a high memory density, allowing for storage of a large amount of data in a compact EEPROM chip.

Endurance: 100000 Write/Erase Cycles

High endurance level ensures long-term reliability and durability of the EEPROM chip, making it suitable for frequent read/write operations.

Technical Specifications

EEPROM CAT28LV256GI-25T attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Access Time:

250 ns

Command User Interface:

NO

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-N32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Page Size (words):

64

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.00015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Width:

11.43 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

CAT28LV256GI-25T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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