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CAT28C256GI-15T

Onsemi

CAT28C256GI-15T by Onsemi

CAT28C256GI-15T by Onsemi is a 32KX8 EEPROM with 100000 Write/Erase Cycles. It operates at 5V, has a page size of 64 words, and offers fast access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,907 parts In-Stock

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Vyrian

USA . 1,435 parts In-Stock

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Native Components

USA . 853 parts In-Stock

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$6.615

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Component Stockers USA

USA . 624 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 10,408 parts In-Stock

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SupplyDigital Components

Austria . 7,245 parts In-Stock

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TANS Electronics

Latvia . 6,373 parts In-Stock

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Northwest PG Solutions

USA . 2,212 parts In-Stock

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$6.483

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Kulean Microsystems

USA . 1,336 parts In-Stock

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Problanco Electronics

Mexico . 1,081 parts In-Stock

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UHIMA Technologies

Türkiye . 967 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 182 parts In-Stock

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Corphita

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Overview

Unlock endless possibilities with the CAT28C256GI-15T EEPROM by Onsemi. Crafted with precision and quality, this versatile chip carrier is designed to meet industrial standards, offering reliability and durability in various applications. With a memory density of 262144 bits and an impressive endurance of 100000 write/erase cycles, this EEPROM provides seamless data storage and retrieval for your projects. Experience the power of cutting-edge technology and elevate your designs with the CAT28C256GI-15T today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and provides protection to the EEPROM, making it suitable for various environments.

Surface Mount: YES

Surface mount capability allows for easy installation and space-efficient design, making it suitable for compact electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to memory locations, improving efficiency and speed in data retrieval and storage.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard electronic systems and power sources.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this EEPROM can withstand high temperatures, making it suitable for industrial applications.

No. of Words: 32768 words

The large memory capacity of 32768 words allows for storing a significant amount of data, making it versatile for various applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed performance, prolonging the EEPROM's battery life and enhancing overall efficiency.

Endurance: 100000 Write/Erase Cycles

The high endurance of 100000 write/erase cycles ensures reliable and durable data storage, making this EEPROM a dependable choice for long-term use.

Technical Specifications

EEPROM CAT28C256GI-15T attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Access Time:

150 ns

Command User Interface:

NO

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.965 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Page Size (words):

64

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.55 mm

Maximum Standby Current:

.00015 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Width:

11.425 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

CAT28C256GI-15T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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