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C88F83B0AU-TC-H

Onsemi

C88F83B0AU-TC-H by Onsemi

Onsemi's C88F83B0AU-TC-H microcontroller features 16-bit size, 131072 ROM words, and 4194304 RAM bytes. Ideal for commercial extended temperature grade applications with a peak reflow temp of 260 °C. Package style is flatpack with gull wing terminals and tin bismuth finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,925 parts In-Stock

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Digiode

USA . 108 parts In-Stock

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AZTECH Wire

Italy . 600 parts In-Stock

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$10.350

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600

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Problanco Electronics

Mexico . 7,187 parts In-Stock

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TANS Electronics

Latvia . 6,738 parts In-Stock

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Northwest PG Solutions

USA . 1,938 parts In-Stock

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Corphita

USA . 1,826 parts In-Stock

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UHIMA Technologies

Türkiye . 900 parts In-Stock

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900

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Native Components

USA . 508 parts In-Stock

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Microchip USA

USA . 415 parts In-Stock

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Corohmni

South Africa . 269 parts In-Stock

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Kulean Microsystems

USA . 265 parts In-Stock

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SupplyDigital Components

Austria . 130 parts In-Stock

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Overview

Enhance your electronic designs with the C88F83B0AU-TC-H microcontroller by Onsemi. Known for their top-quality manufacturing, Onsemi delivers reliable and efficient components that meet the demands of various applications. This microcontroller, with its advanced technology and versatile features, offers customers a valuable solution for their projects. From consumer electronics to industrial automation, this product provides exceptional performance and functionality. Upgrade your designs today with the C88F83B0AU-TC-H and experience the benefits of superior quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, making it suitable for various environments.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Bit Size: 16

Offers a good balance between processing power and cost, making it suitable for a wide range of applications.

Power Supplies (V): 3/5

Provides flexibility in power requirements, allowing the microcontroller to be used in different systems.

No. of Terminals: 120

Offers ample connectivity options for interfacing with external devices and peripherals.

Maximum Operating Temperature: 75 °C

Ensures reliable performance even in high-temperature conditions.

Minimum Operating Temperature: -20 °C

Can operate efficiently in low-temperature environments, increasing its versatility.

ROM Words: 131072

Provides sufficient memory for storing program instructions and data.

RAM Bytes: 4194304

Offers a large amount of temporary storage for data processing, enhancing the microcontroller's capabilities.

Technology: CMOS

Features low power consumption and high noise immunity, making it energy-efficient and reliable.

ROM Programmability: FLASH

Allows for easy and quick reprogramming of the microcontroller, facilitating updates and modifications.

Speed: 4.2 rpm

Provides fast processing speeds, enabling quick execution of tasks and operations.

Technical Specifications

Microcontrollers C88F83B0AU-TC-H attributes and parameters. Explore more Microcontrollers devices from Onsemi

Specs

Bit Size:

16

JESD-30 Code:

S-PQFP-G120

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

120

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

TQFP120,.64SQ,16

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

RAM Bytes:

4194304

ROM Words:

131072

ROM Programmability:

FLASH

Speed:

4.2 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

4.1 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

C88F83B0AU-TC-H Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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