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BZX85C18TR5K

Onsemi

BZX85C18TR5K by Onsemi

BZX85C18TR5K by Onsemi is a Zener diode with 18V nominal reference voltage and 15mA working test current. It has a max power dissipation of 1W, operating temperature range from -65 to 200 °C, and ±5% voltage tolerance. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,638 parts In-Stock

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Digiode

USA . 1,025 parts In-Stock

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Native Components

USA . 546 parts In-Stock

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$5.060

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546

$5.060

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AZTECH Wire

Italy . 1,074 parts In-Stock

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$13.760

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QUARKTWIN TECHNOLOGY LTD

USA . 17,283 parts In-Stock

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Problanco Electronics

Mexico . 7,346 parts In-Stock

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Kulean Microsystems

USA . 3,805 parts In-Stock

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Northwest PG Solutions

USA . 2,309 parts In-Stock

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$4.959

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SupplyDigital Components

Austria . 1,813 parts In-Stock

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UHIMA Technologies

Türkiye . 785 parts In-Stock

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Corphita

USA . 718 parts In-Stock

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Corohmni

South Africa . 444 parts In-Stock

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TANS Electronics

Latvia . 144 parts In-Stock

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Overview

Enhance your electronic designs with the BZX85C18TR5K by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Zener diodes that offer precision and reliability. Ideal for voltage regulation and protection applications, this product ensures consistent performance under various conditions. With its nominal reference voltage of 18V and maximum power dissipation of 1W, customers can trust in the durability and efficiency of this diode. Upgrade your projects with the BZX85C18TR5K and experience the value it brings to your designs.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material ensures higher reliability and stability for the Zener diode.

Working Test Current: 15 mA

The Zener diode can handle a working test current of 15mA, making it suitable for a variety of low-power applications.

Maximum Voltage Tolerance: 5%

The maximum voltage tolerance of 5% ensures accurate voltage regulation in the circuit where the Zener diode is used.

Maximum Power Dissipation: 1 W

With a maximum power dissipation of 1W, this Zener diode can handle higher power loads without getting damaged.

Nominal Reference Voltage: 18 V

The 18V nominal reference voltage makes this Zener diode ideal for applications requiring a stable reference voltage.

Technical Specifications

Zener Diodes BZX85C18TR5K attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-204AL

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

18 V

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

15 mA

Trade Compliance

BZX85C18TR5K Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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