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BZX84C3V3LT3G

Onsemi

BZX84C3V3LT3G by Onsemi

BZX84C3V3LT3G by Onsemi is a Zener diode with a nominal reference voltage of 3.3V and max operating temperature of 150 °C. It has a working test current of 5mA, max power dissipation of 0.225W, and surface mount capability. Ideal for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 43,200 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

43,200

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$0.030

$0.025

$0.023

DigiKey

USA . 43,200 parts In-Stock

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$0.040

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$0.040

Verical

USA . 43,200 parts In-Stock

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43,200

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Digiode

USA . 419 parts In-Stock

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$0.024

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Vyrian

USA . 2,921 parts In-Stock

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2,921

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Distributors (Availability)

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Corphita

USA . 2,148 parts In-Stock

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$0.022

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$0.022

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Corohmni

South Africa . 445 parts In-Stock

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$0.025

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445

$0.025

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Component Stockers USA

USA . 27,489 parts In-Stock

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$0.030

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$0.020

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$0.020

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$0.020

27,489

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$0.020

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$0.020

Native Components

USA . 426 parts In-Stock

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$0.203

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$0.195

426

$0.203

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$0.195

Northwest PG Solutions

USA . 535 parts In-Stock

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$0.223

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$0.197

535

$0.223

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$0.197

AZTECH Wire

Italy . 794 parts In-Stock

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$14.930

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794

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Continental Prestige Electronics

USA . 43,200 parts In-Stock

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$0.021

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QUARKTWIN TECHNOLOGY LTD

USA . 22,290 parts In-Stock

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Problanco Electronics

Mexico . 7,529 parts In-Stock

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Kulean Microsystems

USA . 6,546 parts In-Stock

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SupplyDigital Components

Austria . 6,037 parts In-Stock

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Kepictronics

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Perfect Parts

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UHIMA Technologies

Türkiye . 128 parts In-Stock

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TANS Electronics

Latvia . 20 parts In-Stock

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Overview

Unlock a world of possibilities with the BZX84C3V3LT3G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Zener Diodes. These diodes are perfect for a wide range of applications, offering customers unparalleled value and benefits. Whether you're looking for precision voltage regulation or protection in your circuit design, the BZX84C3V3LT3G is the ideal solution. Trust Onsemi to deliver superior performance and peace of mind with every purchase.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides good protection and insulation for the diode, ensuring its durability and reliability.

Working Test Current: 5 mA

The low working test current of 5 mA allows for efficient operation of the Zener diode, making it suitable for various low-power applications.

Surface Mount: YES

The surface mount capability enables easy and compact integration of the Zener diode onto circuit boards, saving space and simplifying the assembly process.

Nominal Reference Voltage: 3.3 V

The 3.3V nominal reference voltage of the Zener diode ensures stable and accurate voltage regulation in the circuit, making it a reliable choice for voltage reference applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high temperature environments, increasing its versatility and reliability in various applications.

Technical Specifications

Zener Diodes BZX84C3V3LT3G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

95 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

3.3 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Maximum Voltage Tolerance:

6.06 %

Working Test Current:

5 mA

Trade Compliance

BZX84C3V3LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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