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BZX84C12ET1G

Onsemi

BZX84C12ET1G by Onsemi

BZX84C12ET1G by Onsemi is a Zener diode with 12V nominal voltage, 5mA test current, and 150 ohm knee impedance. It is used in applications requiring precise voltage regulation, such as power supplies and voltage references. The diode's small outline package and gull wing terminal form make it suitable for surface mount PCB designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 444,880 parts In-Stock

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Vyrian

USA . 6,311 parts In-Stock

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Digiode

USA . 692 parts In-Stock

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Native Components

USA . 872 parts In-Stock

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$0.149

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$0.143

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Northwest PG Solutions

USA . 325 parts In-Stock

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$0.164

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$0.145

325

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$0.145

AZTECH Wire

Italy . 981 parts In-Stock

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$16.330

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981

$16.330

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Metaverse IC Inc.

Canada . 78,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,142 parts In-Stock

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Kulean Microsystems

USA . 7,551 parts In-Stock

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Problanco Electronics

Mexico . 6,379 parts In-Stock

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TANS Electronics

Latvia . 6,097 parts In-Stock

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SupplyDigital Components

Austria . 2,690 parts In-Stock

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Corphita

USA . 1,694 parts In-Stock

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UHIMA Technologies

Türkiye . 697 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Overview

Discover the reliable BZX84C12ET1G Zener Diode from Onsemi, a top-tier manufacturer known for its quality components. Ideal for a range of applications, this diode offers precision and stability, ensuring optimal performance in your projects. With its small outline package design and high temperature tolerance, this diode delivers exceptional value and efficiency. Trust Onsemi's expertise and elevate your designs with the BZX84C12ET1G Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent protection for the internal components of the zener diode, ensuring long-term reliability and durability.

Working Test Current: 5 mA

Optimal working test current ensures stable and consistent performance of the zener diode in various applications.

Surface Mount: YES

Ease of installation and space-saving design makes the zener diode suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the zener diode to function effectively in demanding environmental conditions.

Nominal Reference Voltage: 12 V

Provides a stable reference voltage of 12 V, making it ideal for voltage regulation and protection circuits in electronic systems.

Technical Specifications

Zener Diodes BZX84C12ET1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

25 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

150 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Maximum Voltage Tolerance:

5.39 %

Working Test Current:

5 mA

Trade Compliance

BZX84C12ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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