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BZX84B4V7LT1

Onsemi

BZX84B4V7LT1 by Onsemi

BZX84B4V7LT1 by Onsemi is a Zener diode with a nominal reference voltage of 4.7V and max power dissipation of 0.225W. It operates at a max temperature of 150 °C, has a dynamic impedance of 80 ohm, and is UL recognized for various applications in electronics requiring precise voltage regulation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,894 parts In-Stock

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Digiode

USA . 1,010 parts In-Stock

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Native Components

USA . 417 parts In-Stock

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$5.451

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AZTECH Wire

Italy . 949 parts In-Stock

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Kulean Microsystems

USA . 7,118 parts In-Stock

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TANS Electronics

Latvia . 6,924 parts In-Stock

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Problanco Electronics

Mexico . 4,322 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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SupplyDigital Components

Austria . 2,997 parts In-Stock

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Northwest PG Solutions

USA . 743 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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UHIMA Technologies

Türkiye . 205 parts In-Stock

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Corphita

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Overview

Discover the power of precision with the BZX84B4V7LT1 Zener Diode from Onsemi. With a reputation for quality and reliability, Onsemi delivers cutting-edge technology in a compact package. Ideal for voltage regulation and circuit protection, this Zener diode offers unparalleled performance and efficiency. Trust Onsemi to provide the solutions you need for your electronic applications. Choose the BZX84B4V7LT1 for superior quality and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the diode, making it suitable for various environments.

Working Test Current: 5 mA

Ensures stable performance under specified conditions.

Surface Mount: YES

Allows easy installation and saves space on the PCB.

Maximum Voltage Tolerance: 1.91 %

Ensures precise and reliable voltage regulation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, increasing product versatility.

Nominal Reference Voltage: 4.7 V

Provides a specific voltage reference, suitable for many applications.

Maximum Power Dissipation: 0.225 W

Can handle moderate power levels without overheating.

Technical Specifications

Zener Diodes BZX84B4V7LT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

80 ohm

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

4.7 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

1.91 %

Working Test Current:

5 mA

Trade Compliance

BZX84B4V7LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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