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BAV70TT1G

Onsemi

BAV70TT1G by Onsemi

BAV70TT1G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.006 us. It is a surface mount device in a small outline package, suitable for rectification applications with a max repetitive peak reverse voltage of 70V and max output current of 0.1A.

Median Price

$0.041

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 113 parts In-Stock

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$0.053

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$0.017

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Adafruit Industries

USA . 100 parts In-Stock

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$0.094

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$0.086

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DigiKey

USA . 236 parts In-Stock

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$0.180

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$0.067

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$0.042

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Future Electronics

Canada . 180,000 parts In-Stock

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Verical

USA . 78,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 57,000 parts In-Stock

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Farnell

UK . 19,120 parts In-Stock

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Element14

Singapore . 17,129 parts In-Stock

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$0.107

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$0.066

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$0.065

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Newark

USA . 9,000 parts In-Stock

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Rochester

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 163 parts In-Stock

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Digiode

USA . 61 parts In-Stock

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Maritex

Poland . 1 parts In-Stock

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1

$0.037

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$0.018

Nova Conductors

Japan . 300 parts In-Stock

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$0.053

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TME

Poland . 930 parts In-Stock

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$0.110

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$0.052

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$0.033

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930

$0.110

$0.052

$0.033

$0.021

Chip Stock

USA . 400,851 parts In-Stock

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NAC Semi

USA . 102,000 parts In-Stock

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IBS Electronics

USA . 72,000 parts In-Stock

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Vyrian

USA . 57,788 parts In-Stock

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Flip Electronics

USA . 57,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15,080 parts In-Stock

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ComSIT USA

USA . 15,080 parts In-Stock

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Cyclops Electronics Ltd

UK . 9,145 parts In-Stock

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Electronics Depot

USA . 2,848 parts In-Stock

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Prism Electronics

USA . 2,847 parts In-Stock

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Tectiva GmbH

Germany . 2,623 parts In-Stock

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Classic Components Corporation

USA . 573 parts In-Stock

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Sensible Micro Corp

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VNN

France . 90 parts In-Stock

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Semicontronic

India . 59,041 parts In-Stock

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$0.011

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$0.011

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59,041

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Ampacity Inc.

Singapore . 58,922 parts In-Stock

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Corphita

USA . 788 parts In-Stock

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788

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Continental Prestige Electronics

USA . 4,521 parts In-Stock

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$0.040

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$0.039

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$0.039

Argo Parts USA

USA . 4,249 parts In-Stock

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$0.040

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$0.039

4,249

$0.040

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$0.039

Modulus Dynamics

Lithuania . 450 parts In-Stock

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$0.058

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$0.058

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$0.056

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450

$0.058

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.094

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$0.086

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$0.077

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100

$0.094

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$0.077

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Corohmni

South Africa . 63 parts In-Stock

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$0.130

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Aztec Data Supply Inc.

USA . 256 parts In-Stock

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$0.154

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256

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Infinite Electronics LLP (Excess)

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Perfect Parts

USA . 409,904 parts In-Stock

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GreenTree Electronics

Israel . 126,000 parts In-Stock

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Eastek

USA . 93,000 parts In-Stock

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Authorized Procurement Solutions

USA . 93,000 parts In-Stock

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Kepictronics

USA . 37,863 parts In-Stock

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iodParts Technologies Inc.

India . 21,360 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 8,381 parts In-Stock

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Kulean Microsystems

USA . 6,277 parts In-Stock

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SupplyDigital Components

Austria . 5,301 parts In-Stock

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TANS Electronics

Latvia . 4,125 parts In-Stock

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Problanco Electronics

Mexico . 3,821 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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Robosynatics

Brazil . 2,000 parts In-Stock

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$1.299

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$1.299

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$1.299

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$1.299

$1.299

$1.299

Lucentia Tech

USA . 2,000 parts In-Stock

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$1.299

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$1.299

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$1.299

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$1.299

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$1.299

Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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UHIMA Technologies

Türkiye . 490 parts In-Stock

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490

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Overview

Enhance your electronic projects with the reliable BAV70TT1G diodes by Onsemi. Crafted from high-quality materials, these diodes offer superior performance and efficiency in a compact package. From rectifying circuits to signal demodulation, the BAV70TT1G is versatile and reliable for a wide range of applications. Experience the value of Onsemi's expertise and innovation with the BAV70TT1G diodes, delivering unmatched quality and precision for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the diode durable and reliable in various environments.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy circuit integration and connection, simplifying the design process.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.006 us

Provides fast recovery time, ensuring minimal power loss and improved efficiency in high-speed applications.

Package Shape: RECTANGULAR

Facilitates space-saving and efficient PCB layout, ideal for compact electronic designs.

No. of Terminals: 3

Offers versatile connection options, allowing for flexible integration in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight design ideal for applications where space is limited.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a wide range of operating conditions.

Terminal Finish: MATTE TIN

Provides good solderability and reliability for long-term performance.

Maximum Power Dissipation: 0.225 W

Can handle power dissipation efficiently, ensuring stable operation under specified conditions.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for proper reflow soldering process without damaging the diode, ensuring accurate and reliable solder joints.

Peak Reflow Temperature °C: 260

Supports high-temperature reflow soldering process, enhancing manufacturing efficiency.

Diode Type: RECTIFIER DIODE

Suitable for rectifying AC to DC current, making it versatile for various electronic applications.

Maximum Forward Voltage (VF): 0.715 V

Low forward voltage drop reduces power losses and improves efficiency in electronic circuits.

Maximum Output Current: 0.1 A

Can handle moderate current levels, suitable for low-power applications.

Terminal Form: GULL WING

Facilitates easy PCB mounting and soldering, enhancing the overall assembly process.

No. of Elements: 2

Dual elements provide redundancy and improve reliability in the circuit design.

Maximum Repetitive Peak Reverse Voltage: 70 V

Can withstand high reverse voltage, suitable for applications requiring rectification of higher voltages.

Maximum Non Repetitive Peak Forward Current: 0.5 A

Capable of handling surge currents without damage, ensuring robust performance in transient conditions.

Diode Element Material: SILICON

Silicon diodes offer reliable performance and high efficiency, making them a popular choice in electronic circuits.

Technical Specifications

Diodes & Rectifiers BAV70TT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Recovery Time:

.006 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAV70TT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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