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BAV70LT3G

Onsemi

BAV70LT3G by Onsemi

BAV70LT3G by Onsemi is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.006 us. It is a surface mount device with a package style of small outline, suitable for rectifier applications. With a max repetitive peak reverse voltage of 100V and max output current of 0.1A, it operates b/w -55 to 150 °C.

Median Price

$0.015

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EBV Elektronik

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Element14

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IBS Electronics

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Corohmni

South Africa . 222 parts In-Stock

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Semicontronic

India . 93,647 parts In-Stock

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Ampacity Inc.

Singapore . 85,134 parts In-Stock

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Modulus Dynamics

Lithuania . 8,973 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Continental Prestige Electronics

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Lucentia Tech

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Overview

Discover the BAV70LT3G by Onsemi, a high-quality diode with a common cathode configuration that offers exceptional performance in various applications. Manufactured by Onsemi, a trusted name in the industry, this diode is designed for reliability and efficiency. With its fast reverse recovery time and low forward voltage, the BAV70LT3G provides customers with superior value and benefits. Whether you're looking for a rectifier diode for your next project or need a reliable solution for your electronics, this diode is the perfect choice. Trust in Onsemi's expertise and choose the BAV70LT3G for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good insulation and protection for the diodes, ensuring durability and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for easy circuit design and efficient operation.

Surface Mount: YES

Being surface mountable makes this diode convenient for automated assembly processes and saves space on the PCB.

Maximum Reverse Recovery Time: 0.006 us

The fast reverse recovery time of 0.006 us ensures minimal power loss and high efficiency in switching applications.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and allows for easy placement on the PCB.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and enables versatile usage.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the diode can withstand harsh environmental conditions.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature of -55°C, this diode can function effectively in extreme cold environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good conductivity and corrosion resistance, while the annealed process reduces stress in the terminals for enhanced durability.

Terminal Position: DUAL

The dual terminal position allows for easy soldering and connection in different orientations.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, this diode can handle moderate power loads efficiently.

Maximum Time At Peak Reflow Temperature (s): 40

The maximum time at peak reflow temperature of 40 seconds ensures proper soldering and reliability during assembly processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables secure and effective soldering during assembly.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is ideal for converting AC to DC power in various electronic circuits.

Maximum Forward Voltage (VF): 1.3 V

With a low maximum forward voltage of 1.3 V, this diode helps minimize voltage drops in the circuit.

Maximum Output Current: 0.1 A

The maximum output current of 0.1 A allows for reliable power delivery in low to moderate current applications.

Terminal Form: GULL WING

The gull-wing terminal form enables easy surface mount soldering and secure mechanical connections.

No. of Elements: 2

Having 2 elements in the diode enhances its performance and operational capabilities in different circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a high maximum repetitive peak reverse voltage of 100 V, this diode can handle reverse voltage spikes without breakdown.

Maximum Non Repetitive Peak Forward Current: 0.5 A

The high maximum non-repetitive peak forward current of 0.5 A allows the diode to withstand short-term high current surges.

Diode Element Material: SILICON

Silicon diode elements offer reliable and stable performance in various electronic applications due to their high conductivity and durability.

Technical Specifications

Diodes & Rectifiers BAV70LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.006 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

BAV70LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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