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BAV70DXV6T1

Onsemi

BAV70DXV6T1 by Onsemi

BAV70DXV6T1 by Onsemi is a rectifier diode with 2 elements in 2 banks, common cathode configuration. It has a max reverse recovery time of 0.006 us and can handle a max output current of 0.2 A. Ideal for applications requiring fast switching speeds and low reverse current requirements.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,090 parts In-Stock

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AZTECH Wire

Italy . 668 parts In-Stock

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$14.110

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Component Stockers USA

USA . 413 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 5,393 parts In-Stock

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SupplyDigital Components

Austria . 2,381 parts In-Stock

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Corphita

USA . 2,283 parts In-Stock

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TANS Electronics

Latvia . 1,674 parts In-Stock

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Problanco Electronics

Mexico . 1,329 parts In-Stock

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Northwest PG Solutions

USA . 1,043 parts In-Stock

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Native Components

USA . 980 parts In-Stock

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UHIMA Technologies

Türkiye . 431 parts In-Stock

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Corohmni

South Africa . 249 parts In-Stock

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Overview

Discover the superior quality and reliability of the BAV70DXV6T1 diode by Onsemi. With a reputation for excellence in manufacturing, Onsemi delivers cutting-edge technology for a variety of applications in the Diodes & Rectifiers category. This innovative product offers customers exceptional value, benefits, and advantages, making it the ideal choice for your electronic projects. Experience high performance and efficiency without compromising on quality with the BAV70DXV6T1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, ensuring reliable performance over time.

Surface Mount: YES

This feature allows for easy and efficient installation on PCBs, saving time and effort in the assembly process.

Maximum Reverse Recovery Time: 0.006 us

The fast reverse recovery time helps in reducing switching losses and improving efficiency in electronic circuits.

Maximum Power Dissipation: 0.5 W

With a high power dissipation capability, this diode can handle relatively high levels of power without overheating.

Maximum Forward Voltage (VF): 0.715 V

The low forward voltage drop ensures minimal power loss and efficient operation of the diode.

Technical Specifications

Diodes & Rectifiers BAV70DXV6T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.006 us

Reverse Test Voltage:

70 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAV70DXV6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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