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BAT54LT3G

Onsemi

BAT54LT3G by Onsemi

BAT54LT3G by Onsemi is a Schottky rectifier diode with 30V breakdown voltage, 0.8V forward voltage, and 0.005us reverse recovery time. Ideal for fast recovery applications, it operates b/w -55 to 150 °C and has a max power dissipation of 0.2W.

Median Price

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Lifecycle Status

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5

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1k+

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ACDS - Activité Composants Distribution Service

France . 5,619 parts In-Stock

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Bristol Electronics

USA . 5,619 parts In-Stock

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Dan-Mar Components

USA . 5,619 parts In-Stock

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Vyrian

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Digiode

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Ampacity Inc.

Singapore . 1,042 parts In-Stock

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$0.010

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AZTECH Wire

Italy . 468 parts In-Stock

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Component Stockers USA

USA . 629 parts In-Stock

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$99.990

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Kepictronics

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Problanco Electronics

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TANS Electronics

Latvia . 3,192 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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UHIMA Technologies

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Overview

Discover the BAT54LT3G by Onsemi, a top-quality diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for fast recovery applications. With a maximum reverse recovery time of just 0.005 us and a maximum forward voltage of only 0.8 V, this diode provides efficient and effective operation. Its small outline package style makes it easy to integrate into various projects, while its matte tin terminal finish ensures durability. Trust the BAT54LT3G to deliver exceptional results for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring longevity in a variety of environments.

Maximum Reverse Recovery Time: 0.005 us

Allows for fast switching times, making this diode suitable for high-speed applications.

Minimum Breakdown Voltage: 30 V

Provides sufficient voltage protection, reducing the risk of damage to the diode under high voltage conditions.

Diode Type: RECTIFIER DIODE

Designed for converting AC to DC, making it ideal for rectifying circuits and power supply applications.

Technology: SCHOTTKY

Offers low forward voltage drop, high switching speed, and better efficiency compared to standard diodes.

Technical Specifications

Diodes & Rectifiers BAT54LT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

FAST RECOVERY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.005 us

Reverse Test Voltage:

25 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT54LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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