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BAT54AWT3G

Onsemi

BAT54AWT3G by Onsemi

BAT54AWT3G by Onsemi is a Schottky rectifier diode with common anode configuration, 2 elements, and max reverse voltage of 30V. It operates at up to 125 °C, has a forward voltage of 0.24V, and can handle a max output current of 0.2A. Ideal for applications requiring fast switching and low power dissipation in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 10,623 parts In-Stock

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Digiode

USA . 893 parts In-Stock

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AZTECH Wire

Italy . 549 parts In-Stock

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$12.830

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QUARKTWIN TECHNOLOGY LTD

USA . 27,933 parts In-Stock

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TANS Electronics

Latvia . 7,771 parts In-Stock

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SupplyDigital Components

Austria . 6,398 parts In-Stock

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Kulean Microsystems

USA . 5,841 parts In-Stock

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Problanco Electronics

Mexico . 2,571 parts In-Stock

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UHIMA Technologies

Türkiye . 531 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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Native Components

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Northwest PG Solutions

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Corphita

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Overview

Discover the superior quality and reliability of the BAT54AWT3G diode by Onsemi. With a common anode configuration and fast reverse recovery time, this small outline rectifier diode is perfect for a wide range of applications. Whether you're working on power supplies, signal processing, or voltage regulation, this Schottky diode offers peak performance at a maximum forward voltage of 0.24 V and output current of 0.2 A. Trust in Onsemi's expertise and innovation to deliver the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making the product suitable for various environments.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Recovery Time: 0.005 us

Ensures fast switching speed and efficiency in rectifying current, making the product suitable for high-frequency applications.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows for reliable performance in a variety of operating conditions.

Maximum Power Dissipation: 0.2 W

Efficient power handling capabilities make the product suitable for low-power applications.

Diode Type: RECTIFIER DIODE

Ideal for converting AC to DC current efficiently, making it a versatile component for various electronic circuits.

Maximum Forward Voltage (VF): 0.24 V

Low forward voltage drop ensures minimal power loss and efficient operation of the diodes.

Technology: SCHOTTKY

Schottky diodes have fast switching times and low forward voltage drop, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for applications requiring rectification of low to medium voltage currents.

Diode Element Material: SILICON

Silicon diodes offer good thermal stability and reliability, making them a popular choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers BAT54AWT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT54AWT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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