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BAT54AWT1G

Onsemi

BAT54AWT1G by Onsemi

BAT54AWT1G by Onsemi is a Schottky rectifier diode with common anode configuration, 2 elements, and max output current of 0.1A. It operates b/w -55 to 125°C, has a forward voltage of 0.24V, and is ideal for surface mount applications requiring fast reverse recovery time of 0.005us.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,488,161 parts In-Stock

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Adafruit Industries

USA . 150 parts In-Stock

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Mouser Electronics

USA . 3,029 parts In-Stock

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Chip1Stop

Japan . 72,000 parts In-Stock

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Arrow

USA . 30,000 parts In-Stock

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Verical

USA . 30,000 parts In-Stock

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DigiKey

USA . 22,153 parts In-Stock

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Element14

Singapore . 17,432 parts In-Stock

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Digiode

USA . 623 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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TME

Poland . 4,949 parts In-Stock

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Bristol Electronics

USA . 13,635 parts In-Stock

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Flip Electronics

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Chip Stock

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NAC Semi

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Vyrian

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QIE Inc.

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ACDS - Activité Composants Distribution Service

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IBS Electronics

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Classic Components Corporation

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Prism Electronics

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Sensible Micro Corp

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Connector Distribution Corp

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Right Parts Inc.

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PC Components Company LLC

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Ampacity Inc.

Singapore . 40,011 parts In-Stock

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Semicontronic

India . 41,401 parts In-Stock

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Corphita

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Corohmni

South Africa . 290 parts In-Stock

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Argo Parts USA

USA . 1,430 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Component Stockers USA

USA . 92,576 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,012 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Continental Prestige Electronics

USA . 57,180 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Eastek

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RC Electronics

USA . 113,026 parts In-Stock

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Metaverse IC Inc.

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TANS Electronics

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Problanco Electronics

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A-Z Elektronik GmbH

Germany . 4,907 parts In-Stock

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Alle Elektronik GmbH

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Glotronic Ltd.

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Kulean Microsystems

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Kepictronics

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GreenTree Electronics

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SupplyDigital Components

Austria . 916 parts In-Stock

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UHIMA Technologies

Türkiye . 797 parts In-Stock

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Overview

Discover the superior quality and reliability of the BAT54AWT1G by Onsemi, a top-tier manufacturer in the Diodes & Rectifiers category. This innovative product boasts a common anode configuration with 2 elements, making it ideal for various applications. Experience fast reverse recovery time, high efficiency, and exceptional performance in a compact package. Trust Onsemi's expertise to deliver cutting-edge technology that meets your needs. Upgrade your projects with the BAT54AWT1G and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and physical protection for the diodes.

Config: COMMON ANODE, 2 ELEMENTS

Allows for easy integration into circuits that require common anode configuration and has 2 elements for added functionality.

Surface Mount: YES

Enables easy installation on PCBs and saves space compared to through-hole mounting.

Maximum Reverse Recovery Time: 0.005 us

Offers fast switching speed and efficiency in rectification applications.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting on PCBs.

No. of Terminals: 3

Provides multiple connection points for flexible circuit designs.

Package Style (Meter): SMALL OUTLINE

Ideal for compact electronic devices and applications where space is limited.

Maximum Operating Temperature: 125 °C

Ensures stable performance even in high-temperature environments.

Minimum Operating Temperature: -55 °C

Allows for operation in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish for long-term use.

Terminal Position: DUAL

Offers flexibility in mounting orientation and connection options.

Maximum Power Dissipation: 0.2 W

Can handle moderate power levels without overheating.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly process.

Peak Reflow Temperature °C: 260

Compatible with common reflow soldering processes.

Diode Type: RECTIFIER DIODE

Designed for efficient rectification of AC to DC.

Maximum Forward Voltage (VF): 0.24 V

Low forward voltage drop for energy-efficient operation.

Maximum Output Current: 0.1 A

Suitable for low to moderate current applications.

Technology: SCHOTTKY

Fast switching speed and low forward voltage drop for high efficiency.

Terminal Form: GULL WING

Easy for automated assembly and provides mechanical stability.

No. of Elements: 2

Provides flexibility in circuit design and applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

Can handle up to 30 volts in reverse bias without breakdown.

Maximum Non Repetitive Peak Forward Current: 0.6 A

Can handle short bursts of higher forward current for transient conditions.

Diode Element Material: SILICON

Silicon material ensures reliability and stability in performance.

Technical Specifications

Diodes & Rectifiers BAT54AWT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT54AWT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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