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BAT54ALT3G

Onsemi

BAT54ALT3G by Onsemi

BAT54ALT3G by Onsemi is a Schottky rectifier diode with common anode, 2 elements. It has a max forward voltage of 0.24V and output current of 0.1A. Ideal for applications requiring fast switching and low power dissipation in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 432,000 parts In-Stock

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432,000

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Flip Electronics

USA . 435,000 parts In-Stock

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435,000

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Vyrian

USA . 7,005 parts In-Stock

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7,005

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Bristol Electronics

USA . 7,000 parts In-Stock

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Digiode

USA . 2,219 parts In-Stock

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2,219

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.183

100+ parts

$0.167

1k+ parts

$0.150

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70

$0.183

$0.167

$0.150

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AZTECH Wire

Italy . 544 parts In-Stock

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$13.360

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544

$13.360

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SupplyDigital Components

Austria . 7,487 parts In-Stock

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Problanco Electronics

Mexico . 7,300 parts In-Stock

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Kulean Microsystems

USA . 2,960 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,148 parts In-Stock

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TANS Electronics

Latvia . 1,682 parts In-Stock

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Northwest PG Solutions

USA . 1,496 parts In-Stock

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Corphita

USA . 1,476 parts In-Stock

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UHIMA Technologies

Türkiye . 837 parts In-Stock

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Native Components

USA . 645 parts In-Stock

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Corohmni

South Africa . 387 parts In-Stock

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Overview

Elevate your electronics projects with the BAT54ALT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality diodes and rectifiers that are sure to exceed your expectations. With its common anode configuration and small outline package style, this Schottky technology diode offers fast reverse recovery time and low forward voltage, making it ideal for a wide range of applications. Trust Onsemi to provide you with reliable components that will enhance the performance of your designs. Experience the value and benefits of the BAT54ALT3G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and mechanical properties, making the diode durable and reliable.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration allows for easier circuit design and 2 elements provide added functionality.

Surface Mount: YES

Enables easy installation on printed circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.005 us

Fast reverse recovery time ensures efficient operation in high-speed applications.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and efficient packaging in various electronic devices.

No. of Terminals: 3

Provides multiple connection points for versatile circuit integration.

Package Style (Meter): SMALL OUTLINE

Small outline package facilitates space-saving design and easy PCB layout.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliability in demanding environments.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability for secure and reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connection options.

Maximum Power Dissipation: 0.225 W

High power dissipation capability ensures stable performance under varying load conditions.

Maximum Time At Peak Reflow Temperature (s): 40

Allows for safe and efficient solder reflow process during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables reliable solder joints during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current in power supply applications.

Maximum Forward Voltage (VF): 0.24 V

Low forward voltage drop minimizes power loss and improves energy efficiency.

Maximum Output Current: 0.1 A

Suitable for low to medium current applications, providing reliable power output.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop for high efficiency.

Terminal Form: GULL WING

Gull-wing terminal form allows for easy surface mounting and good mechanical strength.

No. of Elements: 2

Two elements provide added functionality and versatility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 30 V

High reverse voltage capability allows for reliable operation in various voltage requirements.

Maximum Non Repetitive Peak Forward Current: 0.6 A

High peak forward current handling capability for reliable performance in surge conditions.

Diode Element Material: SILICON

Silicon diode element material offers good durability and reliability in electronic circuits.

Technical Specifications

Diodes & Rectifiers BAT54ALT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.24 V

JEDEC-95 Code:

TO-236AA

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

BAT54ALT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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