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BAS21HT3G

Onsemi

BAS21HT3G by Onsemi

BAS21HT3G by Onsemi is a single rectifier diode with a reverse test voltage of 200V and max forward voltage of 1.25V. It is designed for high voltage applications, operates b/w -55 to 150 °C, and has a small outline package style for surface mount usage.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 129,800 parts In-Stock

1+ parts

-

100+ parts

$0.048

1k+ parts

$0.040

10k+ parts

$0.035

129,800

-

$0.048

$0.040

$0.035

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,087 parts In-Stock

1+ parts

$0.037

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-

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1,087

$0.037

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Bristol Electronics

USA . 19,301 parts In-Stock

1+ parts

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19,301

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Dan-Mar Components

USA . 19,301 parts In-Stock

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19,301

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Vyrian

USA . 4,962 parts In-Stock

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4,962

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,448 parts In-Stock

1+ parts

$0.035

100+ parts

-

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1,448

$0.035

-

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Component Stockers USA

USA . 7,838 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.030

10k+ parts

-

7,838

$0.040

$0.040

$0.030

-

Native Components

USA . 473 parts In-Stock

1+ parts

$0.045

100+ parts

-

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$0.043

473

$0.045

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$0.043

Corohmni

South Africa . 99 parts In-Stock

1+ parts

$0.192

100+ parts

-

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99

$0.192

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.215

100+ parts

$0.196

1k+ parts

$0.176

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-

2,000

$0.215

$0.196

$0.176

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AZTECH Wire

Italy . 1,029 parts In-Stock

1+ parts

$19.530

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1,029

$19.530

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Kepictronics

USA . 30,000 parts In-Stock

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Kulean Microsystems

USA . 7,435 parts In-Stock

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7,435

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Authorized Procurement Solutions

USA . 5,500 parts In-Stock

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5,500

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Problanco Electronics

Mexico . 2,982 parts In-Stock

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2,982

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SupplyDigital Components

Austria . 2,354 parts In-Stock

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2,354

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Northwest PG Solutions

USA . 2,203 parts In-Stock

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TANS Electronics

Latvia . 2,055 parts In-Stock

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2,055

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UHIMA Technologies

Türkiye . 611 parts In-Stock

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611

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Overview

Discover the high-quality BAS21HT3G diode by Onsemi, a reliable manufacturer known for its superior products. This diode, ideal for high voltage applications, offers exceptional value with its fast reverse recovery time and low reverse current. With a maximum power dissipation of 0.2W and a breakdown voltage of 250V, this diode provides efficient performance and reliability. Whether you're working on electronics or power supplies, trust the BAS21HT3G to deliver outstanding results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan and reliability.

Maximum Reverse Recovery Time: 0.05 us

Fast reverse recovery time ensures efficient operation and high-speed switching capabilities.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and efficient performance.

Maximum Operating Temperature: 150 °C

Suitable for high-temperature environments, making it versatile for various applications.

Minimum Operating Temperature: -55 °C

Wide operating temperature range ensures functionality in extreme conditions.

Maximum Power Dissipation: 0.2 W

Efficient power dissipation capability for reliable performance under different load conditions.

Maximum Breakdown Voltage: 250 V

High breakdown voltage ensures protection against voltage spikes and surges.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring optimal performance in such scenarios.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop minimizes power loss and enhances overall efficiency.

Maximum Output Current: 0.2 A

Can handle moderate current loads effectively, suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers BAS21HT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

HIGH VOLTAGE

Minimum Breakdown Voltage:

250 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

250 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS21HT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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