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BAS16XV2T1G

Onsemi

BAS16XV2T1G by Onsemi

BAS16XV2T1G by Onsemi is a single rectifier diode with max. reverse recovery time of 0.006 us, forward voltage of 0.715 V, and max. output current of 0.2 A. It is used in applications requiring small outline surface mount diodes for temp range -55 to 150 °C.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

42

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1k+

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Arrow

USA . 2 parts In-Stock

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$0.022

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Verical

USA . 915,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 570,000 parts In-Stock

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Farnell

UK . 105,929 parts In-Stock

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Element14

Singapore . 105,929 parts In-Stock

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Chip1Stop

Japan . 59,750 parts In-Stock

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Rochester

USA . 36,000 parts In-Stock

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RS (Exports)

UK . 8,800 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,133 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Bristol Electronics

USA . 77,863 parts In-Stock

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Maritex

Poland . 9 parts In-Stock

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Component Electronics Inc.

Canada . 6,210 parts In-Stock

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Chip Stock

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Flip Electronics

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Component Sense

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Dan-Mar Components

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Cyclops Electronics Ltd

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NAC Semi

USA . 27,000 parts In-Stock

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Q Components

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IBS Electronics

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Atlantic Semiconductor

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EPE Components Inc.

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LIBRA Elektronik GmbH

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Netsource Technology, Inc.

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Inventory MP

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Ack Elektronik San.Tic.Ltd.Sti

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Micros

Poland . 1,800 parts In-Stock

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Partservice

France . 1,800 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 1,800 parts In-Stock

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Velocity Electronics

USA . 1,447 parts In-Stock

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VNN

France . 890 parts In-Stock

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Speed Components Ltd

Israel . 700 parts In-Stock

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Demsay Elektronik

Türkiye . 35 parts In-Stock

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Lakeland Logistics Inc

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Semicontronic

India . 458,486 parts In-Stock

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Ampacity Inc.

Singapore . 452,211 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Corphita

USA . 244 parts In-Stock

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Argo Parts USA

USA . 406 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,313 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Eastek

USA . 1,611,000 parts In-Stock

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Ashlea Components Ltd (Excess)

UK . 1,084,210 parts In-Stock

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Glotronic Ltd.

UK . 336,000 parts In-Stock

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RC Electronics

USA . 109,666 parts In-Stock

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GreenTree Electronics

Israel . 84,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

USA . 26,738 parts In-Stock

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Allen Electronics Distributors

USA . 25,800 parts In-Stock

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$0.679

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Kepictronics

USA . 24,000 parts In-Stock

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Robosynatics

Brazil . 23,661 parts In-Stock

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Lucentia Tech

USA . 23,661 parts In-Stock

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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TANS Electronics

Latvia . 7,965 parts In-Stock

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Problanco Electronics

Mexico . 6,213 parts In-Stock

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S.R.D Solutions

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SupplyDigital Components

Austria . 4,444 parts In-Stock

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Kulean Microsystems

USA . 4,318 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,160 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,440 parts In-Stock

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UHIMA Technologies

Türkiye . 116 parts In-Stock

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Overview

Unleash the power of innovation with the BAS16XV2T1G by Onsemi. As a leading manufacturer in the Diodes & Rectifiers category, Onsemi delivers top-quality products that exceed industry standards. This single-configured diode offers fast performance and reliable operation, making it ideal for a wide range of applications. From consumer electronics to automotive systems, this diode provides exceptional value, efficiency, and durability. Upgrade your projects with the BAS16XV2T1G and experience the difference that Onsemi quality can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy are durable materials, ensuring the diode's longevity and reliability in various operating conditions.

Config: SINGLE

Single configuration simplifies the setup and installation process, making it convenient for users.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient integration onto circuit boards.

Maximum Reverse Recovery Time: 0.006 us

The extremely low reverse recovery time enhances the efficiency and responsiveness of the diode in applications requiring rapid switching.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and install the diode in various devices and equipment.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and ensures proper electrical contact.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space on the circuit board, making it suitable for compact designs.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to function reliably in demanding environments without overheating.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures the diode remains functional even in cold conditions.

Terminal Finish: MATTE TIN

Matte Tin terminal finish provides good solderability and electrical conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and installation options for different circuit layouts.

Maximum Power Dissipation: 0.2 W

Able to dissipate up to 0.2 Watts of power, ensuring the diode can handle power surges and fluctuations safely.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature minimizes thermal stress on the diode during assembly processes, leading to reliable performance.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables the diode to withstand the high temperatures encountered during soldering processes.

Diode Type: RECTIFIER DIODE

Rectifier diode type indicates suitability for converting AC to DC, making it ideal for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.715 V

Low maximum forward voltage drop of 0.715 volts ensures energy efficiency and minimal power loss in forward conduction.

Maximum Output Current: 0.2 A

Capable of handling up to 0.2 Amps of current, making it suitable for low to moderate current applications.

Terminal Form: FLAT

Flat terminal form provides easy soldering and secure electrical connections for stable performance.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage of 100 Volts ensures protection against reverse voltage spikes in the circuit.

Maximum Non Repetitive Peak Forward Current: 0.5 A

Capable of withstanding up to 0.5 Amps of non-repetitive peak forward current for short durations, enhancing reliability in transient conditions.

Diode Element Material: SILICON

Silicon material offers good electrical properties, allowing the diode to efficiently conduct current with low forward voltage drop.

Technical Specifications

Diodes & Rectifiers BAS16XV2T1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.006 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS16XV2T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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