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BAS16DXV6T1

Onsemi

BAS16DXV6T1 by Onsemi

BAS16DXV6T1 by Onsemi is a diode with 2 elements, featuring a max reverse recovery time of 0.006 us and a max reverse current of 50 uA. It is used in applications requiring a small outline package style, such as rectifier diode circuits operating b/w -55 to 150 °C temperature range.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

4,000

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,889 parts In-Stock

1+ parts

$0.051

100+ parts

-

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-

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1,889

$0.051

-

-

-

R&J Components

USA . 3,469 parts In-Stock

1+ parts

-

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3,469

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Vyrian

USA . 3,038 parts In-Stock

1+ parts

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3,038

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-

-

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Microfarads

USA . 1,945 parts In-Stock

1+ parts

-

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1,945

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,292 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

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2,292

$0.049

-

-

-

Corohmni

South Africa . 143 parts In-Stock

1+ parts

$0.054

100+ parts

-

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143

$0.054

-

-

-

Native Components

USA . 543 parts In-Stock

1+ parts

$0.190

100+ parts

-

1k+ parts

-

10k+ parts

$0.182

543

$0.190

-

-

$0.182

Northwest PG Solutions

USA . 153 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

$0.184

153

$0.209

-

-

$0.184

AZTECH Wire

Italy . 907 parts In-Stock

1+ parts

$12.950

100+ parts

-

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907

$12.950

-

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Kulean Microsystems

USA . 8,300 parts In-Stock

1+ parts

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8,300

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TANS Electronics

Latvia . 6,661 parts In-Stock

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6,661

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SupplyDigital Components

Austria . 4,069 parts In-Stock

1+ parts

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4,069

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Problanco Electronics

Mexico . 1,901 parts In-Stock

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1,901

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

1+ parts

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100+ parts

$0.037

1k+ parts

$0.034

10k+ parts

$0.034

900

-

$0.037

$0.034

$0.034

UHIMA Technologies

Türkiye . 427 parts In-Stock

1+ parts

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100+ parts

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427

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Overview

Discover the BAS16DXV6T1 by Onsemi, a reliable and high-quality diode that offers exceptional performance for a wide range of applications. Manufactured by Onsemi, a trusted name in the industry known for their superior products, this diode boasts a fast reverse recovery time and low reverse current, making it ideal for various electronic circuits. With a maximum reverse voltage of 100V and an operating temperature range from -55 °C to 150°C, this diode ensures stability and efficiency in your designs. Trust the BAS16DXV6T1 for all your rectification needs and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan of the product.

Config: SEPARATE, 2 ELEMENTS

Allows for independent operation of each element, offering versatility in circuit design.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.006 us

Swift reverse recovery time enhances efficiency and responsiveness in applications.

Maximum Reverse Current: 50 uA

Low reverse current minimizes power loss and improves overall performance.

Package Shape: RECTANGULAR

The rectangular shape facilitates compact and organized circuit layouts.

Reverse Test Voltage: 75 V

A high reverse test voltage ensures reliable operation under varying conditions.

No. of Terminals: 6

Sufficient terminals for versatile connectivity options in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package design saves space on the PCB and enhances overall system miniaturization.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in diverse environments.

Minimum Operating Temperature: -55 °C

Ensures reliable operation even under extreme low-temperature conditions.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal positions provide flexibility in mounting and connectivity options.

Maximum Power Dissipation: 0.5 W

Efficient power dissipation capability enhances the product's overall reliability and performance.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time reduces the risk of thermal damage during assembly processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and connection integrity.

Diode Type: RECTIFIER DIODE

Rectifier diode design is suitable for converting alternating current (AC) to direct current (DC) in various applications.

Maximum Forward Voltage (VF): 0.715 V

Low forward voltage drop minimizes power loss and improves efficiency in circuits.

Maximum Output Current: 0.2 A

A suitable output current rating for various low to moderate power applications.

Terminal Form: FLAT

Flat terminal form ensures secure and stable connections during operation.

No. of Elements: 2

Having two elements provides redundancy and backup in case one element fails.

Maximum Repetitive Peak Reverse Voltage: 100 V

High peak reverse voltage tolerance makes the diode reliable and durable in demanding applications.

Diode Element Material: SILICON

Silicon diode element material offers high durability and stable electrical characteristics for consistent performance.

Technical Specifications

Diodes & Rectifiers BAS16DXV6T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.006 us

Reverse Test Voltage:

75 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS16DXV6T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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