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ADT7476ARQZ-R7

Onsemi

ADT7476ARQZ-R7 by Onsemi

ADT7476ARQZ-R7 by Onsemi is an 8-bit temperature sensor with a supply voltage range of 3V to 3.6V, offering high accuracy of 2.5 °C. It features a digital output interface and operates b/w -40 °C to 125 °C, making it ideal for applications requiring precise temperature monitoring in compact spaces.

Median Price

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Vyrian

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Digiode

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A2Z Electronics, Inc.

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EMSNET

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Native Components

USA . 499 parts In-Stock

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$9.490

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Northwest PG Solutions

USA . 1,351 parts In-Stock

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AZTECH Wire

Italy . 937 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Corphita

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TANS Electronics

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UHIMA Technologies

Türkiye . 966 parts In-Stock

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Robosynatics

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Lucentia Tech

USA . 900 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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Microchip USA

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Perfect Parts

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Overview

Enhance your temperature monitoring systems with the ADT7476ARQZ-R7 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality temperature sensors that ensure accurate readings and reliable performance. Ideal for a wide range of applications, this sensor offers precise temperature measurements with ease of use and installation. Stay ahead of the competition and elevate your projects with the value and benefits that the ADT7476ARQZ-R7 provides. Trust Onsemi for all your temperature sensing needs.

Feature Benefit Bullets

Maximum Supply Voltage: 3.6 V

High maximum supply voltage allows for compatibility with a wide range of power sources, increasing flexibility in usage.

No. of Bits: 8

8 bits of resolution provide precise temperature measurements, allowing for accurate and detailed readings.

Body Width: 3.9 inch

Compact body width makes it easy to integrate this temperature sensor into various applications without taking up much space.

Sensors or Transducers Type: TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL

Versatile sensor type with options for switching, digital output, and serial communication enhances the functionality and adaptability of the product.

Body Height: 1.55 mm

Low body height allows for a slim profile, enabling the sensor to be easily mounted in tight spaces or on small devices.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides a standardized form factor that is commonly used and easily integrated into various design layouts.

Minimum Supply Voltage: 3 V

Low minimum supply voltage ensures efficient power consumption, extending the product's battery life and reducing energy costs.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the sensor to be used in extreme environments without risking damage or performance degradation.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables reliable performance in both cold and hot conditions, making it suitable for a variety of applications.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable signal transmission and longevity of the product.

Maximum Operating Current: 3 mA

Low maximum operating current minimizes power consumption, making the sensor energy-efficient and suitable for battery-powered devices.

Maximum Accuracy °C: 2.5

High accuracy of 2.5 °C ensures precise temperature readings, making it ideal for applications where precise monitoring is required.

Body Length/Diameter: 8.65 mm

Compact body length/diameter allows for easy integration and mounting in various devices or systems.

Termination Type: SOLDER

Solder termination type provides a reliable and secure connection, ensuring stable signal transmission and mechanical integrity.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface type offers enhanced signal integrity and noise immunity, resulting in accurate and reliable data transmission.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation process and enables easy integration into PCBs or other surface-mounted applications.

Technical Specifications

Temperature Sensors ADT7476ARQZ-R7 attributes and parameters. Explore more Temperature Sensors devices from Onsemi

Specs

Maximum Accuracy (Cel):

2.5

Additional Features:

HYSTERESIS IS 0.5V

Body Width:

3.9 inch

Body Height:

1.55 mm

Body Length/Diameter:

8.65 mm

JESD-609 Code:

e3

Mounting Feature:

No. of Bits:

8

Maximum Operating Current:

3 mA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin (Sn)

Termination Type:

SOLDER

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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