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74HC595DR2G

Onsemi

74HC595DR2G by Onsemi

74HC595DR2G by Onsemi is an 8-bit digital shift register with a propagation delay of 210 ns. It operates at a nominal voltage of 3V and has a max frequency of 4MHz. This CMOS technology device is used in applications requiring positive edge triggering, such as military-grade temperature environments.

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 146 parts In-Stock

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$1.150

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$0.870

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$0.750

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146

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Chip Stock

USA . 925,290 parts In-Stock

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Vyrian

USA . 5,153 parts In-Stock

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Digiode

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Corohmni

South Africa . 206 parts In-Stock

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$1.150

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AZTECH Wire

Italy . 675 parts In-Stock

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$13.680

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675

$13.680

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$15.044

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$13.690

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$12.336

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450

$15.044

$13.690

$12.336

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TANS Electronics

Latvia . 6,188 parts In-Stock

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Kulean Microsystems

USA . 2,437 parts In-Stock

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Corphita

USA . 1,908 parts In-Stock

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Northwest PG Solutions

USA . 1,800 parts In-Stock

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Problanco Electronics

Mexico . 947 parts In-Stock

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SupplyDigital Components

Austria . 717 parts In-Stock

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UHIMA Technologies

Türkiye . 277 parts In-Stock

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Native Components

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Microchip USA

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Kepictronics

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Overview

Unlock endless possibilities with the 74HC595DR2G by Onsemi, a top-quality digital shift register that offers unmatched performance and reliability. Ideal for a wide range of applications, this product boasts impressive features and benefits that cater to all your needs. Experience seamless operation, efficient power consumption, and precise output characteristics with this versatile device. Trust Onsemi's reputation for excellence and innovation to deliver a superior solution for your digital shift register requirements. Elevate your projects to new heights with the 74HC595DR2G and revolutionize the way you work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This ensures that the product is lightweight and durable, making it suitable for various applications.

No. of Bits: 8

With 8 bits, this shift register can handle a moderate amount of data, making it versatile for different tasks.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low nominal supply voltage of 3V makes this product energy-efficient and suitable for battery-powered devices.

Propagation Delay (tpd): 210 ns

The low propagation delay ensures fast data processing, making this shift register ideal for applications requiring quick response times.

Output Characteristics: 3-STATE

The 3-state output allows for flexible control of the output signal, enhancing the versatility of this shift register.

Technology: CMOS

Being based on CMOS technology, this shift register offers low power consumption and high noise immunity, making it a reliable choice for various applications.

Technical Specifications

Digital Shift Registers 74HC595DR2G attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Count Direction:

RIGHT

Family:

HC/UH

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

4000000 Hz

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay (tpd):

210 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Shift Registers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trigger Type:

POSITIVE EDGE

Width:

3.9 mm

Trade Compliance

74HC595DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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