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4N25SR2VM

Onsemi

4N25SR2VM by Onsemi

4N25SR2VM by Onsemi is a SINGLE optocoupler with 0.06A forward current, 30V collector-emitter breakdown voltage, and 7500V isolation voltage. Ideal for applications requiring high-voltage signal isolation in temperature range of -55 to 100°C.

Median Price

$0.444

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

$0.320

100+ parts

$0.310

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$0.310

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4,000

$0.320

$0.310

$0.310

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Farnell

UK . 855 parts In-Stock

1+ parts

$0.444

100+ parts

$0.236

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855

$0.444

$0.236

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Element14

Singapore . 721 parts In-Stock

1+ parts

$1.020

100+ parts

$0.513

1k+ parts

$0.428

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721

$1.020

$0.513

$0.428

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.312

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500

$0.312

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Digiode

USA . 3,247 parts In-Stock

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$0.798

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3,247

$0.798

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IBS Electronics

USA . 2,000 parts In-Stock

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$0.244

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$0.237

2,000

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-

$0.244

$0.237

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

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$0.971

10k+ parts

$0.874

2,000

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$0.971

$0.874

Vyrian

USA . 1,157 parts In-Stock

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1,157

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Cyclops Electronics Ltd

UK . 346 parts In-Stock

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346

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LIBRA Elektronik GmbH

Germany . 94 parts In-Stock

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VNN

France . 90 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,289 parts In-Stock

1+ parts

$0.178

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1,289

$0.178

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Corohmni

South Africa . 289 parts In-Stock

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$0.210

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289

$0.210

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.306

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1k+ parts

$0.294

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1,000

$0.306

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$0.294

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Continental Prestige Electronics

USA . 3,234 parts In-Stock

1+ parts

$0.312

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$0.306

3,234

$0.312

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$0.306

Argo Parts USA

USA . 1,155 parts In-Stock

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$0.312

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$0.303

1,155

$0.312

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$0.303

Semicontronic

India . 1,535 parts In-Stock

1+ parts

$0.315

100+ parts

$0.307

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$0.306

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1,535

$0.315

$0.307

$0.306

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Corphita

USA . 2,474 parts In-Stock

1+ parts

$0.756

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2,474

$0.756

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Aztec Data Supply Inc.

USA . 3,936 parts In-Stock

1+ parts

$0.775

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3,936

$0.775

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Perfect Parts

USA . 8,906 parts In-Stock

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8,906

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TANS Electronics

Latvia . 6,136 parts In-Stock

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6,136

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SupplyDigital Components

Austria . 4,783 parts In-Stock

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Kulean Microsystems

USA . 3,699 parts In-Stock

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3,699

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Eastek

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 893 parts In-Stock

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893

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Supply Digital

USA . 418 parts In-Stock

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iodParts Technologies Inc.

India . 158 parts In-Stock

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158

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Problanco Electronics

Mexico . 35 parts In-Stock

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35

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Overview

Elevate your electronics projects with the 4N25SR2VM optocoupler transistor outputs from Onsemi. Renowned for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. This single configuration optocoupler offers a wide range of applications, providing isolation and signal transfer in a variety of electronic devices. With a high current transfer ratio and excellent performance in extreme temperatures, this optocoupler ensures seamless functionality and reliability. Experience the difference with Onsemi's 4N25SR2VM and take your projects to the next level.

Feature Benefit Bullets

Configuration: SINGLE

The single configuration makes this optocoupler easy to use and versatile in a variety of applications.

Maximum Forward Current: 0.06 A

With a high maximum forward current, this optocoupler can handle more power, making it suitable for demanding tasks.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Being a transistor output optocoupler allows for fast and efficient signal transfer, making it ideal for high-speed applications.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature ensures reliability and stable performance even in harsh environments.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this optocoupler can function effectively in extremely cold conditions.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring a secure connection in any setup.

Maximum Power Dissipation: 0.15 W

This low power dissipation value helps in keeping the optocoupler cool and efficient during operation.

Minimum Current Transfer Ratio: 20 %

The minimum current transfer ratio ensures accurate signal transmission and minimal loss, resulting in reliable performance.

Maximum Dark Current: 50 nA

The low maximum dark current reduces signal interference and enhances the overall performance of the optocoupler.

Minimum Collector-emitter Breakdown Voltage: 30 V

The high minimum collector-emitter breakdown voltage provides protection against voltage spikes, ensuring the longevity of the device.

Nominal Current Transfer Ratio: 20 %

The nominal current transfer ratio maintains consistency in signal transmission, resulting in reliable operation.

Maximum Isolation Voltage: 7500 V

With a high maximum isolation voltage, this optocoupler offers excellent electrical insulation, making it safe to use in high-voltage applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and allows for space-efficient placement on PCBs.

Maximum Forward Voltage: 1.5 V

The low maximum forward voltage drop minimizes power loss and ensures efficient operation of the optocoupler.

Technical Specifications

Optocoupler Transistor Outputs 4N25SR2VM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED, VDE APPROVED

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

20 %

Nominal Current Transfer Ratio:

20 %

Maximum Dark Current:

50 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

7500 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.15 W

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

4N25SR2VM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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