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1SV298

Onsemi

1SV298 by Onsemi

1SV298 by Onsemi is a surface mount diode with 50V reverse test voltage and 0.1uA max reverse current. Operating temp ranges from -55 to 125 °C. Ideal for applications requiring low power dissipation, such as signal rectification in electronic circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,371 parts In-Stock

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Digiode

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Native Components

USA . 444 parts In-Stock

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$0.112

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Northwest PG Solutions

USA . 1,138 parts In-Stock

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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TANS Electronics

Latvia . 6,766 parts In-Stock

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Problanco Electronics

Mexico . 6,213 parts In-Stock

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Kulean Microsystems

USA . 4,622 parts In-Stock

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SupplyDigital Components

Austria . 3,048 parts In-Stock

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Corphita

USA . 1,643 parts In-Stock

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Corohmni

South Africa . 88 parts In-Stock

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UHIMA Technologies

Türkiye . 39 parts In-Stock

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Overview

Discover the innovative 1SV298 by Onsemi, a top-quality Other Function Diode perfect for various applications. Manufactured by Onsemi, known for their commitment to excellence, this diode offers reliable performance and durability. With its surface mount capability and impressive specifications, customers can expect superior functionality in a wide range of environments. Experience the value and benefits of the 1SV298, providing peace of mind and efficiency for your projects.

Feature Benefit Bullets

Surface Mount: YES

This feature allows for easy and convenient mounting onto circuit boards, saving space and making installation simpler.

Maximum Reverse Current: 0.1 uA

The low reverse current ensures minimal power loss and efficient operation of the diode.

Reverse Test Voltage: 50 V

With a high reverse test voltage, this diode can handle higher voltage applications without risk of damage.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for use in a wide range of environments without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures that the diode can function reliably even in extreme cold conditions.

Maximum Power Dissipation: 0.15 W

The low power dissipation helps in reducing heat buildup and ensures the diode remains efficient during operation.

Maximum Forward Voltage (VF): 1.15 V

The low forward voltage drop indicates minimal energy loss when current flows through the diode, making it energy-efficient.

Maximum Repetitive Peak Reverse Voltage: 50 V

The high repetitive peak reverse voltage rating makes this diode suitable for applications requiring high voltage handling capability.

Technical Specifications

Other Function Diodes 1SV298 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

1.15 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Power Dissipation:

.15 W

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

1SV298 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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