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1N5381BG

Onsemi

1N5381BG by Onsemi

1N5381BG by Onsemi is a Zener diode with a nominal reference voltage of 130V and max power dissipation of 5W. It operates at a max temperature of 200°C, making it suitable for high-power applications requiring precise voltage regulation. With a unidirectional polarity and isolated case connection, this Zener diode is ideal for use in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 2,868 parts In-Stock

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Digiode

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Nova Conductors

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Pegasus Components GmbH

Germany . 45 parts In-Stock

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Ampacity Inc.

Singapore . 683 parts In-Stock

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AZTECH Wire

Italy . 549 parts In-Stock

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Component Stockers USA

USA . 456 parts In-Stock

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Kulean Microsystems

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Bastille Electronics

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Argo Parts USA

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Problanco Electronics

Mexico . 2,916 parts In-Stock

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TANS Electronics

Latvia . 1,456 parts In-Stock

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SupplyDigital Components

Austria . 1,239 parts In-Stock

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Continental Prestige Electronics

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South Africa . 272 parts In-Stock

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UHIMA Technologies

Türkiye . 37 parts In-Stock

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Overview

Looking for a reliable and high-quality Zener diode for your electronics projects? Look no further than the 1N5381BG by Onsemi. With a reputation for excellence in semiconductor manufacturing, Onsemi delivers top-notch products that are built to last. Whether you're working on power supplies, voltage regulators, or precision circuits, this Zener diode provides stable voltage regulation and protection against overvoltage conditions. Trust Onsemi for superior performance and peace of mind in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, making it suitable for various environments.

Working Test Current: 10 mA

The low working test current allows for efficient operation and minimal power consumption.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance of 5% ensures accurate and reliable performance in voltage regulation applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200°C, this diode can withstand demanding thermal conditions.

Maximum Power Dissipation: 5 W

The high maximum power dissipation of 5W indicates the diode's ability to handle high power levels without damage.

Nominal Reference Voltage: 130 V

The 130V nominal reference voltage makes this diode suitable for applications requiring precise voltage regulation.

Technical Specifications

Zener Diodes 1N5381BG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

190 ohm

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

130 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

10 mA

Trade Compliance

1N5381BG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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