Loading...

1N5379BG

Onsemi

1N5379BG by Onsemi

1N5379BG by Onsemi is a Zener diode with 110V nominal voltage, 5% tolerance, and 125 ohm impedance. It operates at up to 200 °C, ideal for voltage regulation in power supplies and electronic circuits requiring high power dissipation. The diode's unidirectional polarity and silicon element make it suitable for various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,162 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,162

-

-

-

-

Digiode

USA . 110 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

110

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 498 parts In-Stock

1+ parts

$15.520

100+ parts

-

1k+ parts

-

10k+ parts

-

498

$15.520

-

-

-

Component Stockers USA

USA . 746 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

746

$99.990

-

-

-

Native Components

USA . 703 parts In-Stock

1+ parts

$423.157

100+ parts

$414.694

1k+ parts

$410.463

10k+ parts

$406.231

703

$423.157

$414.694

$410.463

$406.231

Northwest PG Solutions

USA . 819 parts In-Stock

1+ parts

$465.473

100+ parts

-

1k+ parts

-

10k+ parts

-

819

$465.473

-

-

-

Metaverse IC Inc.

Canada . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Problanco Electronics

Mexico . 7,287 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,287

-

-

-

-

Kulean Microsystems

USA . 3,531 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,531

-

-

-

-

SupplyDigital Components

Austria . 3,167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,167

-

-

-

-

Corphita

USA . 1,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,790

-

-

-

-

TANS Electronics

Latvia . 1,515 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,515

-

-

-

-

UHIMA Technologies

Türkiye . 888 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

888

-

-

-

-

Corohmni

South Africa . 453 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

453

-

-

-

-

Overview

Discover the power of the 1N5379BG Zener Diode by Onsemi, a high-quality component that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this Zener diode is perfect for a wide range of applications. With its maximum voltage tolerance of 5% and maximum power dissipation of 5W, this diode ensures precise and stable operation. Whether you're working on power supplies, voltage regulators, or electronic circuits, the 1N5379BG delivers exceptional value, efficiency, and peace of mind. Trust Onsemi for all your semiconductor needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, ensuring reliability and durability in various operating conditions.

Working Test Current: 12 mA

The 12 mA test current ensures accurate and consistent performance of the diode in its specified operating range.

Maximum Voltage Tolerance: 5 %

The tight tolerance of 5% allows for precise voltage regulation and control in electronic circuits.

Maximum Power Dissipation: 5 W

With a high maximum power dissipation of 5W, this zener diode can handle higher power levels without being damaged, making it ideal for high-power applications.

Nominal Reference Voltage: 110 V

The 110V nominal reference voltage provides a stable reference for voltage regulation and protection, making it suitable for a wide range of applications.

Technical Specifications

Zener Diodes 1N5379BG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

125 ohm

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

110 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

12 mA

Trade Compliance

1N5379BG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20