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1N5371BG

Onsemi

1N5371BG by Onsemi

1N5371BG by Onsemi is a Zener diode with 60V nominal voltage, 5% tolerance, and 40 ohm impedance. It operates at up to 200 °C, dissipating 5W power. Widely used in electronic circuits for voltage regulation due to its unidirectional polarity and silicon material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,214 parts In-Stock

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Digiode

USA . 2,027 parts In-Stock

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Northwest PG Solutions

USA . 1,517 parts In-Stock

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$3.183

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AZTECH Wire

Italy . 535 parts In-Stock

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$15.220

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535

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SupplyDigital Components

Austria . 6,657 parts In-Stock

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Problanco Electronics

Mexico . 3,174 parts In-Stock

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Kulean Microsystems

USA . 3,097 parts In-Stock

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TANS Electronics

Latvia . 1,850 parts In-Stock

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Corphita

USA . 1,495 parts In-Stock

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Native Components

USA . 953 parts In-Stock

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UHIMA Technologies

Türkiye . 460 parts In-Stock

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Corohmni

South Africa . 238 parts In-Stock

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Overview

Discover the unmatched quality and reliability of the 1N5371BG Zener Diode by Onsemi. With a reputation for excellence, Onsemi delivers cutting-edge technology that ensures superior performance in a variety of applications. Whether you're looking to stabilize voltage or protect sensitive components, this Zener diode offers unmatched value, benefits, and advantages. Trust in Onsemi to provide the solutions you need for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers good protection and durability for the diode, making it suitable for various operating environments.

Working Test Current: 20 mA

Ensures reliable performance and stability under specified current conditions.

Maximum Voltage Tolerance: 5 %

Provides a consistent voltage output within a small tolerance range, ensuring accuracy in operation.

Maximum Power Dissipation: 5 W

Capable of handling higher power levels, making it suitable for a range of applications.

Nominal Reference Voltage: 60 V

Provides a stable reference voltage of 60V, suitable for various circuit designs and applications.

Technical Specifications

Zener Diodes 1N5371BG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

60 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

1N5371BG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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