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1N5339BRL

Onsemi

1N5339BRL by Onsemi

1N5339BRL by Onsemi is a Zener diode with a nominal reference voltage of 5.6V and max power dissipation of 5W. It operates at a max temperature of 200°C, making it suitable for applications requiring precise voltage regulation in high-temperature environments. With a working test current of 220mA and low dynamic impedance of 1Ω, this diode is ideal for use in electronic circuits where stable voltage levels are crucial.

Median Price

$0.165

Lifecycle Status

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18

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1k+

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Adafruit Industries

USA . 1,000 parts In-Stock

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$0.165

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$0.157

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Digiode

USA . 5,997 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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ComSIT Distribution GmbH

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NAC Semi

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Prism Electronics

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PC Components Company LLC

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Classic Components Corporation

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LittleDiode

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Nova Conductors

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Component Sense

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EMSNET

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Aztec Data Supply Inc.

USA . 2,455 parts In-Stock

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$0.042

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IDEA Electronic Components Group

UK . 213 parts In-Stock

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$0.059

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MKK Technologies

India . 748 parts In-Stock

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$0.111

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DigiPath Technology Company

USA . 748 parts In-Stock

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Ampacity Inc.

Singapore . 890 parts In-Stock

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Semicontronic

India . 643 parts In-Stock

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Corphita

USA . 2,568 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Problanco Electronics

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Parana Technologies

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GreenTree Electronics

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Modulus Dynamics

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Overview

Unleash the power of precision with the 1N5339BRL Zener Diode by Onsemi. Crafted with excellence, this high-quality component offers unmatched reliability and performance. Ideal for a wide range of applications, this Zener diode ensures stable voltage regulation and protection against voltage spikes. Trust in Onsemi's expertise and elevate your projects with the exceptional value and benefits of the 1N5339BRL. Experience superior quality and peace of mind with every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Working Test Current: 220 mA

High working test current capacity ensures reliable performance under normal operating conditions.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various circuit designs.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures accurate voltage regulation in electronic circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature range allows the diode to withstand elevated temperatures without performance degradation.

Maximum Power Dissipation: 5 W

High power dissipation capability ensures the diode can handle high power loads without overheating.

Diode Type: ZENER DIODE

Being a Zener diode, it provides stable voltage regulation and protection against voltage spikes in electronic circuits.

Nominal Reference Voltage: 5.6 V

The precise nominal reference voltage of the diode ensures accurate voltage regulation in circuits.

Technical Specifications

Zener Diodes 1N5339BRL attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

1 ohm

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Maximum Voltage Tolerance:

5 %

Working Test Current:

220 mA

Trade Compliance

1N5339BRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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